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Silicon substrate AlGaN / GaN heterostructure growth studies

Author: ZhangLei
Tutor: ChenChangQing
School: Huazhong University of Science and Technology
Course: Optical Engineering
Keywords: GaN High electron mobility transistors The buffer layer AlGaN / GaN heterostructure
CLC: TN304.05
Type: Master's thesis
Year: 2011
Downloads: 63
Quote: 0
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Abstract


Gallium nitride (GaN) is the fastest growing in recent years, the third generation of semiconductor materials. Since GaN is chemically stable , high temperature, direct band gap is wide, high -power , etc., can be very good to make up for other semiconductor materials Si and AsGa shortcomings and become the next generation of semiconductor material of the device main application materials at home and abroad research focus. AlGaN / GaN -based high electron mobility transistors (HEMT) is the AlGaN / GaN heterostructure formed a microwave power GaN -based devices , as compared with the conventional microwave devices , HEMT has a high transconductance , high saturation and high cut-off frequency, advantages and become the next generation of communications industry mainly used in microwave devices . GaN materials at home and abroad have been on many years of research, and to achieve a certain amount of commercial applications , but there are still many problems to be solved. This paper introduces the domestic and international situation GaN epitaxial materials research and application prospects , and then describes the growth of the GaN crystal growth plan adopted by a two-step , and each step of the growth process , and finally outlines the grown GaN crystal defect types and of the GaN crystal . In the experimental part , the paper discusses in detail the GaN crystal is grown on a Si substrate by the different buffer layer, and have found several experiments conducted using different buffer layer of GaN grown window value , and gives the XRD of the grown , AFM and optical microscopy the measured results. For a 2 -inch Si lateral growth of GaN and we compared the pros and cons of various buffer layer , and finally found using graded AlGaN buffer layer grown GaN epitaxial layer crystal best quality. Finally, we studied the use of superlattice growth of GaN epitaxial layer growth for the next large GaN epitaxial crystal studies carried out preliminary studies . On an experimental basis in the previous step , we have grown into the AlN barrier layer AlGaN / GaN heterostructures , and for the AlGaN layer thickness and composition has been optimized , growing out of the crystal quality and surface morphology of an international standard AlGaN / GaN heterostructures for the next HEMT device fabrication foundation.

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