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Si/SiC Heterojunction on 6H-SiC

Author: ZhuFeng
Tutor: ChenZhiMing；LinTao
School: Xi'an University of Technology
Course: Microelectronics and Solid State Electronics
Keywords: Si SiC XRD TEM Heterojunction
CLC: TN304.24
Type: Master's thesis
Year: 2009
Downloads: 76
Quote: 1
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Abstract


In prograss of the intensive research on SiC devices, SiC light-actived devices have been gradually interested in. However it is not sensitive to visible or near infrared light. This greatly limits its application in optoelectronics. Crystalline Si/SiC heterojunction is less understood up to now although it has a number of potential applications in electronics and optoelectronics, for example the light-activated SiC power switches in which the Si may play a role of light absorbing layer.In this work, Si films is hetero-epitaxially grown on Si face of (0001) n-type 6H-SiC substrates by LPCVD (’Low Pressure Chemical Vapor Deposition), and B2H6 is used as a dopant for the p-Si grown at temperatures in a range of 700-950℃. X-ray diffraction analysis (XRD) and Transmission electron microscope (TEM) tests have demonstrated that the samples prepared at the temperatures ranged from 850℃to 900℃are characterized as monocrystalline silicon. The rocking XRD curves show a well symmetry with FWHM of 0.4339°Omega. Twin crystals and stacking faults observed in the epitaxial layers might be responsible to widening of the rocking curves. Dependence of the crystal structure and surface topography on growth temperature is discussed based on the experimental results. Energy band structure and rectifying characteristics of the Si/SiC heterojunctions are also preliminarily tested.

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CLC: > Industrial Technology > Radio electronics, telecommunications technology > Semiconductor technology > General issues > Material > Compound semiconductor > Ⅳ - Ⅵ compound semiconductors
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