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Solvothermal Synthesis and Characteration of Silicon Nano-Structure Material

Author: WangDongLiang
Tutor: ZhouYu
School: Harbin Institute of Technology
Course: Materials Science
Keywords: One-dimensional silicon nanostructures Solvothermal Hydroxy -bridged Phase interface Fe - catalyzed Crystallinity Photoluminescence
CLC: TB383.1
Type: Master's thesis
Year: 2008
Downloads: 33
Quote: 0
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Abstract


In this paper, a different reaction system solvothermal synthesis of a variety of one-dimensional silicon nanostructures by X-ray powder diffraction , scanning electron microscopy , high-resolution transmission electron microscopy , infrared absorption and photoluminescence spectra of test methods sample characterization and analysis of different silicon nanostructures growth mechanism . The main results are as follows: There are three growth mechanism of the solvothermal synthesis of one - dimensional silicon nanomaterials . First, the solvent of water - ethanol systems Earn iron center silicon nano- core-shell structure , and play the role of stability and bridging hydroxyl group of the solvent in the growth process of silicon nanostructures , silicon nano- core-shell structure yield a hydroxyl group as the solvent in reduced and an increase in pressure , the improve crystallinity nanostructures . 90 mol % water 10 mol % ethanol is more suitable for the synthesis of silicon nano- core-shell structure . Secondly, the water - benzene system solvent resultant product along LT ; 111 gt ; curl direction of growth of monocrystalline silicon nano tube , 80 ~ 100 nm in diameter , length of 600nm to 1μm , a solvent immiscible two-phase droplets curved interface in silicon nucleation of nanotubes , played a catalytic role in the growth process . Third , the product obtained in the toluene system for ball ends with nano- Fe amorphous silicon nanowires / tubes , nano- Fe ball in silicon nanowire / tube directional growth process has played a catalytic role , the resulting silicon nanostructures smooth surface , Movement falling and rising trend diameter and degree of crystallinity with increasing pressure , the minimum diameter of up to about 40nm . All the reaction with the holding time , the silicon nanostructure yield increases, the holding time of 24h suitable for synthesis of one - dimensional silicon nanostructures . The introduction of the wafers in the reactor for the growth of silicon nanostructures provide stable nucleation sites , which can promote the growth of silicon nanostructures . The end portion of the ball with nano - Fe amorphous silicon nanostructures at 441nm and the apparent width of the photoluminescence peak , and its infrared absorption spectrum deletion of Si -O - Si bending vibration mode , are silicon nanostructures oxygen vacancy caused .

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