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A Study of Voltage-Controlled Friction Characteristics in Polishing Process of SiC Ceramics

Author: HaoLiJun
Tutor: DiWenJie
School: Harbin Institute of Technology
Course: Mechanical Design and Theory
Keywords: Silicon carbide ceramic Ground testing machine Friction electrochemical polishing Electric friction characteristics
CLC: TQ174.13
Type: Master's thesis
Year: 2008
Downloads: 47
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Abstract


Silicon carbide (Silicon Carbide) ceramic with high wear resistance to corrosion , high brittleness and low fracture toughness characteristics of the traditional ultra-precision machining method is difficult to achieve high - precision surface quality requirements . Friction electrochemical polishing (Tribo-Electrochemical Polishing, TECP) is a ceramics and other difficult-to-machine materials to achieve a surface smooth and damage - free processing of new technology . The the TECP use of metal-based research with and without free abrasive polishing fluid friction micro- peak chemical dissolution mechanism of polishing surface ; appropriate electric field is applied through the electrode the metal lap / ceramic polishing system , so that the surface of the lap and polishing friction and chemical processes of the ceramic surface is subjected to the influence of the controllable electric field . And by controlling the voltage between the metal lap and specimen , to affect the material surface of the polishing process . In this paper, the characteristics of the silicon carbide ceramic material , self-developed CNC circular flat moving abrasive testing machine , the polishing process of silicon carbide ceramic electric friction characteristics , first CNC round flat moving abrasive testing machine modal analysis and the structure improvement ; Secondly , effects of the SiC / gray cast iron (HT200) and silicon carbide / diamond wheel with vice the electric friction characteristics under different load , voltage , speed , and other conditions , under different conditions , the friction coefficient variation ; the research and analysis of silicon carbide ceramic friction applied electric field electrochemical behavior and friction mechanism . Through experimental analysis for silicon carbide ceramics , the different states of the electric friction characteristics , results show that the electrical friction characteristics and friction, the polarity of the applied voltage , and other factors related to the different polishing liquid generated the different properties of the boundary film , the conductive lead boundary film , compactness, different thickness , thereby the impact on the friction coefficient is also different . This study of silicon carbide ceramic friction electrochemical polishing grinding load , speed , voltage , and process data , and provides a theoretical basis for the ultra-precision machining of ceramics .

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CLC: > Industrial Technology > Chemical Industry > Silicate > Ceramic Industry > Basic theory > Physical properties
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