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Study on the Preparation and Properties of Aluminium-doped Zinc Oxide Films

Author: XuZuo
Tutor: YuJun
School: Huazhong University of Science and Technology
Course: Microelectronics and Solid State Electronics
Keywords: AZO films RF magnetron sputtering Resistivity Transmittance spectrum Electrode of solar cells
CLC: TM24
Type: Master's thesis
Year: 2009
Downloads: 86
Quote: 0
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Abstract


In recent two decades, ZnO based films have been studied as a focus of transparent conductive oxide (TCO) films because of good optical and electronical properties and cheap raw material, non toxicity,easiness to dope and so on. Some achievements are acquired by some international research institutions, but there are still some shortages. Current works are focused in such aspects:stability and reliability of techonology; deposition techonology of large area and even films in high rate, compatibility to lithography, large scale industrialization. The main work in this paper are as follows:First, high quality AZO films had been deposited on the 7101 glass,K9 glass and PET substrate by the RF magnetron sputtering method with target of AlZnO (98%ZnO+2%Al2O3). Meanwhile, we used X Ray Diffraction (XRD), Scanning Electron Microscope (SEM), Ultraviolet-visible spectrum (UV-vis), Four-Point Probes methods to observe and analyse the structure properties,crystallite size, micro-appearance, optical properties, electronical properties of samples, optical properties and conductive mechanism were analyzed theoretically. We summarized the influence of the experiment parameters(such as the substrate temperature,sputtering power,working pressure,oxygen and hydrogen proportion,annealing temperature) on the properties of thin films. Through those above works, we got an optimized parameters for RF sputtering process for AZO film preparation.According to the results, AZO films get good optical and electronical properties when the substrate temperature is 400℃, the sputtering power is 120W, the working pressure is 0.5Pa, the annealing is 400℃. Its average transparence in visible light is 93.25% and resistivity is 4.68×10-4?·cm.Second,the initially smooth films were etched in acid after deposition.We tried to use acetic acid to etch AZO films other than hydrochloride and studied influence of acetic acid concentration and etching time on the micro-appearance of surface and optical and electronical properties of thin films.This will be a good founfation for the following study of application of AZO films on electrode of silicon thin-films solar cells.Accoring to the results, AZO films get a good texture structure when acetic acid concentration is 1.2% and etching time is 150 S. Its average transparence in visible light is 80.48%, resistivity is 7.24×10-4?·cm and average reflectivity in near-infrared short waves is 50.02%.

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