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Study on Synthesis of Cubic Boron Nitride Films by Microwave Plasma Chemical Vapor Deposition

Author: LiXiangPing
Tutor: YuJie
School: Harbin Institute of Technology
Course: Materials Science and Engineering
Keywords: Cubic Boron Nitride Film MPCVD
CLC: O484.1
Type: Master's thesis
Year: 2008
Downloads: 32
Quote: 0
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Abstract


Cubic boron nitride ( CBN ) is a synthetic group III-V compound semiconductor material , it has many excellent physical and chemical properties, such as wide band gap ( GT ; 6eV ) , after the hardness of the diamond under high temperature and strong antioxidant capacity , does not react with ferrous metals , the n-type and p-type doping , has a very attractive prospect in terms of mechanical , optical , electronics , and over the years has been attracting the interest of many researchers at home and abroad . In this paper, the microwave plasma chemical vapor deposition method , and the mixed gas system He-N2-H2-BF3 cBN films were successfully prepared on Si wafer . By applying a bias voltage in the reaction process to achieve a growth of the cubic boron nitride . By changing the gas component , bias change , working pressure , microwave power system parameters of the law of the growth of cBN films . FTIR, SEM, Raman and other testing methods for depositing thin films to characterize the structure and process parameters on the Preparation of cBN films investigated , according to the test results of the system to obtain the following main results : 1 ) in the case of fixed H2 flow with the BF3 the gradual increase of the flow of cBN growth rate first increases and then decreases ; 2 ) in the case of a fixed flow of BF3 , H2 flow rate there is a suitable range , greater than or less than this range cBN difficult to grow ; 3) bias is a key factor in the growth of cBN films , there is no generation of the cBN under low bias , the bias voltage required to achieve a sufficiently high only when the cBN film growth ; 4) Preparation of pressure on the cBN films have a greater impact , the present study determining the preferred pressure range ; adapted cBN growth 5) within the parameters used in this study , the changes in the power of the impact the growth of cBN film , and only when the power reaches a certain value , only the growth of cBN films .

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CLC: > Mathematical sciences and chemical > Physics > Solid State Physics > Thin Film Physics > Film growth,structure and epitaxy
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