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Design of 0.18μm CMOS 10Gb/s Laser Diode Driver and Transceiver Circuit

Author: LeiZuo
Tutor: FengJun
School: Southeast University
Course: Circuits and Systems
Keywords: Optical-Fiber Communication Synchronous Digital Hierarchy(SDH) Complementary-Metal-Oxide-Semiconductor(CMOS) Transceiver Multiplexer(MUX) Laser diode driver Latch System on chip(SOC)
CLC: TN249
Type: Master's thesis
Year: 2005
Downloads: 89
Quote: 0
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Abstract


With the rapid development of telecommunication networks、computer networks and Internet, it is urgent to build information super-highway. Optic-fiber communication systems are the principal parts of information super-highway for its merits such as great capacity、long transmit distance、economizing energy source、anti interference and anti radiation etc. Thus, it is very important to design high speed integrated circuits for optical transmission systems with independent property.In the building blocks of an optical transmission system, the transceiver circuit is in the transmit direction. And it including two critical parts which are 4:1 multiplexer circuit(MUX) and the laser diode driver(LDD).The LDD is used to provide enough gain to magnify input signal. Because it is the critical part to change the digital signal to analog, voltage to current so it is one of the hot topics of researches.This paper introduces the design of a 10 Gbit/s laser diode driver circuit to be fabricated in 0.18 um CMOS technology for SDH STM-64. The difficulty of design focus on how to decrease the parasitical capacitance and which architecture can be adopted. In this paper, firstly the knowledge about SDH transmission system is introduced; subsequently the design procedure and test results are presented.Employing two stages of differential amplifiers directly, the circuit can amplify the input differential signal amplitude from 0.3V to 1.7V on a 50? output resistance at 10 Gb/s. the highest frequency the circuit can work is 11Gb/s, with the total power consumption is about 77.4mW,and the chip size is 0.94*1.25mm2。The test results prove that the LDD performance has reach advanced level.The design of a transceiver circuit at 10 Gb/s will be fabricated with 0.18 um CMOS technology. The post simulation show that the circuit can amplify the input signal amplitude from 0.2V to 1.4V on a 50? output resistance at 10.5Gb/s, with the total power consumption is about 230mW.The chip size is about 1.77*0.94 mm~2.

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CLC: > Industrial Technology > Radio electronics, telecommunications technology > Photonics technology,laser technology > Laser technology, the maser > Laser applications
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