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The Application and Development of Plasma in Semiconductor Field

Author: PeiJiaWang
Tutor: LiLingXia；ZhuangFuQiang
School: Tianjin University
Course: Electronic and Information Engineering
Keywords: Inductive Couple Plasmas(ICP) dry etch selectivity Cryo etching MEMS Aspect ratio PECVD
CLC: TN405
Type: Master's thesis
Year: 2009
Downloads: 9
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Abstract


Plasma technology has been widely used in industrial production, scientific research, and become an important indicator of the modern science and technology. This paper will introduce in plasma sources of development and application, including inductive plasma source surface wave, microwave plasma source, atmospheric plasma source, plasma submerged ion implantation and plasma torch, etc. Plasma source mechanism includes dc discharge to microwave discharge, Depression in the plasma to atmospheric plasma, Low temperature plasma to high temperature plasma. This will be a source of plasma number of introduction, including dc discharge to microwave discharge, Depression in the plasma to atmospheric plasma, Low temperature plasma to produce high plasma, currently in use method of plasma of power source is DC discharge , low frequency and medium frequence power from KHz to MHz, RF discharge 13.6MHz and microwave discharge (245 GHz).The etching principle of inductive couple plasmas was introduced in this paper. The etching wasper formed by SF6. The important parameters,such as ICP source power ,the flow of SF6 ,pressure ,chuck temperature andopening sizesof the trench etc that affect the etching rate and selectivity were studied. The experimental results show that ,high etching rate and selectivity corresponded to high RF1 and high flow of SF6 ,and high RF2 power corresponded to high etching rate but low selectivity. The etching rate was the highest when chuck temperature was 1.2 Pa. 0℃etching temperature corresponded to the highest etching rate of Si. There were little relations between opening size of trench and etching rate.High aspect ratio structures have been successfully fabricated by plasma cryo etching on silicon wafers. The anisotropy,Si etching rate and selectivityof Si to SiO2 are better than 0.99 ,1.5 m/min,and 75 ,respectively.Variousfactors,including the chuck temperature,partial pressure ratio of the reactive gases,pressure ,and power of the inductively coupled plasma(ICP) coil ,were carefully evaluated to optimize the etchingconditions. The results showthat the anisotropic etching significantly dependsontheoptimal oxygenpartial pressure and the low chuck temperature.We found that the ion bombardment plays a more important role in the plasma cryo etching than the surface reactive etching does and that the discharge of the dielectric layers results in the undercut close to the mask.

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CLC: > Industrial Technology > Radio electronics, telecommunications technology > Microelectronics, integrated circuit (IC) > General issues > Manufacturing process
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