Dissertation > Excellent graduate degree dissertation topics show

Research on the Silicon Etching Model in Vibration Cathode Chamber

Author: CaoBoCheng
Tutor: YinSheng
School: Huazhong University of Science and Technology
Course: Microelectronics and Solid State Electronics
Keywords: silicon purification cold plasma vibration cathode chamber etching rate
CLC: TN405
Type: Master's thesis
Year: 2009
Downloads: 6
Quote: 0
Read: Download Dissertation

Abstract


In these years, the popularization of solar cells on earth was limited by the high cost of silicon materials. In this condition, the research of developing a low-cost silicon production method is a key area of solar cells’development. The article which based on the improvement of vertical plate electrode chamber did some research on the etching theory and etching method of cold plasma silicon purification.There are many disadvantages in vertical plate electrode chamber’s purification process, such as short etching time, low etching speed, complex operation, energy waste, and so on. Aimed at the problem, the article put forward a vibration cathode chamber with rotational magnetic field. The general analysis about the kinetic status demonstrated that by adjusting the declining time and the external voltage, choosing appropriate silicon radius ranging from 25 to 50μm, the dropping time in that chamber can be promoted to over ten times, and the etching speed can be improved, too.In order to prompt the content of silicon to 99.99% and above, the thesis calculated the etching rate from the angle of sputtering yield and particles’flux. By analyzing correlative parameters, we got the main factors which affect the Si-particles’etching rate in the cold plasma and the way to improve the etching rate. The thesis testify the deduce calculation of etching speed by experiment in vertical electrode chamber. According to the etching speed, to reach the purification goal, it only needs 80s to 160s which can be achieved in the vibration cathode by one or two times in the condition that there is no other impurity brought in.

Related Dissertations

  1. Research on the Purification of Industrial Silicon by Physical Metallurgical Method,TQ127.2
  2. Research of Preparation of Enzymatic Hydrolysis Lignin/Lignocelluosic Fiber Composites,TS653
  3. The Study of Multi-walled Carbon Nanotube/polymer Damping Materials,TB535.1
  4. Study on the Characteristics of Atmospheric Pressure DBD Cold Ar Plasma Jet with Double-power Electrodes,O53
  5. Study on the Interactions of Two Cold Atmospheric Plasma Jets,O531
  6. Analysis and Research of Interface Modification of Straw and Plastic Composites,TS653.6
  7. Plasma Treatment Effect of PVA Film and Desizing Effect of Starched Fabric,TS105.2
  8. Study on the Atmospheric Pressure Large Scale Cold Plasma Jet,O53
  9. Design of a New Surface Etchting Apparatus,TM914.41
  10. Research on Purification Effect for Cold Plasma Etching Silicon,TN305.7
  11. Plasma - catalytic activation of carbon dioxide to carbon compounds,O643.3
  12. Experimental Study and Kinetic Simulation Involving in Methane Cracked and Converted to C2 Hydrocarbons in Cold Plasma,O643.1
  13. A Removal of Trace Silicon Impurity from Aluminum Isopropoxide,TF821
  14. Atmospheric Pressure RF-Plasma System and Its Application in Photoresist Stripping,O539
  15. Cold atmospheric pressure RF plasma etching processes in the application of,TN405.7
  16. The Study of the Deposition of SiO2 Films with RF Cold Plasma at Atmospheric-pressure,TN304.05
  17. Modeling and Simulation of Sacrificial Layer Etching,TN405
  18. Study on Principle of Plasma-induced Graft Reaction on Organic Film,TB383.2
  19. Experimental Study on Atmospheric Pressure Cold Plasma Jet with Preionized Dual-power Electrodes,O53
  20. Applied Basic Research on Cold Plasma-catalytic Oxidation of Methane to Methanol,TQ223.121

CLC: > Industrial Technology > Radio electronics, telecommunications technology > Microelectronics, integrated circuit (IC) > General issues > Manufacturing process
© 2012 www.DissertationTopic.Net  Mobile