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Total splash prepared Mn -doped GaN films and nanostructures

Author: LiuWenJun
Tutor: XueChengShan
School: Shandong Normal University
Course: Microelectronics and Solid State Electronics
Keywords: GaN Nanostructures Mn-doped Magnetron sputtering Ammoniated annealing
CLC: TB383.1
Type: Master's thesis
Year: 2010
Downloads: 71
Quote: 0
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Abstract


The development of the semiconductor industry has experienced first-generation semiconductor materials Si, Ge and other second-generation semiconductor materials GaAs, GaP, as well as third-generation semiconductor materials SiC, ZnSe, GaN, etc.. As the representative of the third generation of semiconductor material gallium nitride (GaN), compared with the previous two generations, has a high thermal conductivity, high temperature, anti-radiation, chemical stability, high strength and high hardness, wide band system directly, within The external quantum efficiency characteristics, more suited to the production of high-temperature, high-frequency and high-power electronic devices and short-wavelength lasers with broad application prospects in the field of microelectronics and optoelectronics. Many novel physical properties of one-dimensional GaN nanomaterials as novel low-dimensional materials more and more people's interest in research. With the development needs of GaN-based devices, in order to better achieve its photoelectron characteristics appropriate doping is very necessary. Of Ⅲ - Ⅴ dilute magnetic semiconductor (DMS) material doped with transition metals such as Mn, Fe, because of its comprehensive features with semiconductors and magnetic materials, is expected to widely used in electronic devices of the future of the magnetic (spin). More than room temperature, the Curie temperature of the Mn-doped GaN-based diluted magnetic semiconductor materials to achieve the preferred material for room temperature or higher temperature download carrier induced ferromagnetism. So, based on the growth of one-dimensional nanostructures to achieve GaN further achieve the GaN nanostructures Mn doping significance. This article prepared by co-sputtering Mn-doped GaN nanostructures. X-ray diffraction (XRD), scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HRTEM), Fourier transform infrared (FTIR) absorption spectra, X-ray photoelectron spectroscopy (XPS) and photoluminescence (PL) spectrum test means of a detailed analysis of the Mn-doped GaN nanomaterials structure, composition, morphology and photoluminescence characteristics. Amination temperature, different the ammoniated time and different ammonia flow, initially proposed and discussed synthesized GaN nanostructure growth mechanism of GaN nanostructures. The main findings are as follows: 1. Cosputtering and ammoniated Preparation of Mn-doped GaN nanostructure using magnetron sputtering on Si substrates by sputtering Mn / Ga 2 O < sub> 3 layered structure of film, and then sputtered Mn / Ga 2 O 3 layered film in ammonia atmosphere annealing preparation GaN nanostructures . By varying the annealing time, annealing temperature and ammonia flow, to study its influence on the synthesis of GaN nanostructures. The results show that: the different annealing temperature and annealing time and flow rate of ammonia synthesis of GaN nanostructures has a significant impact, the synthesis of one-dimensional nanostructures flat strip wurtzite structure single crystal Mn-doped GaN. Optical characteristics of 2.GaN nanostructures room temperature, with a wavelength of 325 nm light to excite the sample surface, the PL spectrum obtained only contains the two major emission peak to respectively correspond located at 388 nm and at 409 nm. Strong emission peak at 409 nm, emission peak of GaN material reported in the literature compared to larger redshifts. Mn-doped adjust bar band structure of GaN nanowires, reducing the band gap, and to change its behavior in the ultraviolet region of the light-emitting. Emission peak at 388 nm may be caused by the transition between the main conduction band or donor states to Mn. Explore the high temperature of the growth mechanism of GaN nanostructures ammonia gradually decomposed into NH 2 , NH, H 2 N 2 and other products , solid-state Ga 2 O 3 H 2 reaction to generate intermediate gaseous the Ga of 2 O, the substrate ammonia catalytic reaction occurs at the system GaN nucleation and growth of these nuclei in the substrate suitable energy position, relying on point to become a nucleus growth, to continue with the the ammoniation process of the conduct of GaN nuclei grow into GaN microcrystalline, when the growth direction of the crystallites grow in the same direction, to form a single crystal GaN nanowires, nano-wires, nano particles. Ammoniated layered structure Mn / Ga 2 O 3 thin films, can be such that in the the microcrystalline growth process, there will be more Mn ions presence inside the GaN crystal, To achieve the effective doping of Mn. The deeper cause is still under further study.

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