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Study on the Surface Potential Model of Lateral Double-diffused MOSFET

Author: WeiChangHe
Tutor: ZhengXueRen
School: South China University of Technology
Course: Microelectronics and Solid State Electronics
Keywords: Bulk Silicon Lateral Double-diffused MOSFET Single-REduced SURface Field Double-RESURF Multiple-RESURF
CLC: TN386
Type: Master's thesis
Year: 2010
Downloads: 101
Quote: 1
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Abstract


With the development of power semiconductor technology and system integration technology, increasing study has been paid to power device. LDMOS(Lateral Double-diffused MOSFET) with planar structure has received much attention and application in the Power IC and RF IC because of the advantage of its simple manufacturing process, easy to implement, stable performance and good compatibility with large scale Integrated Circuit; LDMOS is also widely used in the field of large area flat panel displays and automotive electronics as a high-voltage power amplifier devices. Therefore, LDMOS model is of great significance.This paper systematically discusses the surface potential and surface electric field models of the RESURF PN diode, S-RESURF LDMOS and D-RESURF LDMOS three types of device, elaborating non-field plate and field plate structure of the latter two in the chapter three and chapter four, respectively, considering the field plate can reduce the peak electric field under its cover.A variety of methods are employed to solve Poisson equation when discussing on the surface potential and surface electric field models of LDMOS with different structures in this paper. Boundary conditions and parabolic function approximation with the advantage of simplicity, reducing computation, improving computing speed are used to simplify Poisson equation as differential equation; separation of variables is applied to Laplace equation transformed by Poisson equation, owing to the maturity of the solution method of the Laplace equation; in order to decrease the computational error and improve the model accuracy, the hypothesis should be as few as possible, therefore directly integrating the Poisson equation along the vertical direction as well, using the continuity of electric flux density and the first-order approximation of the potential two-dimensional partial derivatives, solving the Poisson equation finally.Some improvement is proposed based on inheriting the much achievements of predecessors, such as the linear approximation of lateral electric field of the bulk silicon RESURF PN Diode is revised by the parabolic approximation; polycrystalline silicon gate field plate of the BS S-RESURF LDMOS is added to two stages, exponential distribution of impurity of the drift region is altered by a more reasonable and realistic Gaussian distribution; the biggest innovation is the establishment of the surface potential model of BS M-RESURF LDMOS with gate field plate and drain field plate, the simulation results show that the surface potential present linear distribution along the direction of the drift region, the electric field is close to the uniform distribution ideally, greatly enhance the breakdown voltage of devices.In conclusion, the proposed surface potential model are based on physical mechanism, the model gives the influence on the surface potential in terms of devices structure parameters and applied voltage, the dependence of breakdown voltage on the length of drift region is calculated. These models will be a power tool for device engineers to provide accurate first-order design schemes and physical insights into RESURF LDMOS.

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CLC: > Industrial Technology > Radio electronics, telecommunications technology > Semiconductor technology > Field-effect devices
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