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With the development of social economy, the energy crisis has become a huge problem in the world today. As a wide band gap semiconductor material, a substitute of ITO film in the field of solar cell and the new favorite of transparent conductive film, zinc oxide is attracting widespread attention. In addition, owing to the high exciton binding energy (60meV), as well as optical, piezoelectric, gas properties and other properties, ZnO films have also been used to facture non-linear optical devices, UV detectors, piezoelectric devices, voltage sensitive devices, ultraviolet light-emitting devices, gas sensors and other fields.In this paper, aluminum doped zinc oxide (ZnO:Al) thin film materials with C-axis preferred orientation were made on common glass by electron beam evaporation method. Through XRD, SEM and fluorescence spectrophotometer, the effect of thickness, substrate temperature, doping ions on the optical properties of ZAO thin films were characterized. And a preliminary study was made for the ceramic target used by electron beam evaporation.
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