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Research of FBAR Temperature Sensor

Author: LiuShiJie
Tutor: DingKouBao;LuoJiKui
School: Zhejiang University
Course: Microelectronics and Solid State Electronics
Keywords: The thin film bulk acoustic resonators The FBAR temperature sensor Temperature frequency coefficient ANSYS
CLC: TP212.11
Type: Master's thesis
Year: 2012
Downloads: 53
Quote: 0
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Abstract


In recent years , the development of MEMS manufacturing technology makes film bulk acoustic resonator (FBAR) to obtain a wide range of commercial applications . On one hand , FBAR important role to play in the field of mobile communications to FBAR oscillators , filters, duplexers have been widely used in mobile , FBAR RF devices have the advantages of small size , high operating frequency , low insertion loss , high power capacity , communication field. On the other hand , FBAR sensor field the rapid development of the FBAR sensor high sensitivity and high reliability aroused extensive research interests . Currently, the number of reported FBAR sensor micro - mass sensor, temperature sensors, pressure sensors , humidity sensors , ultraviolet sensors , and the like . Although the the FBAR sensor 's development is still in the stage of laboratory research , but with the deepening of their research , I believe that in the near future , it will be widely used in many fields . First FBAR structure , principle , equivalent circuit model , as well as the production process simple inductive summary based on a sacrificial layer material silicon etching FBAR , the method has the process steps are simple and easy to implement advantages. Secondly, the paper focuses on the frequency characteristics of the two FBAR sample temperature , drawing a temperature of from 20 ° C to 200 ℃ the frequency curve and calculate its temperature frequency coefficient ( TCF ) , the measurement results show that the parallel resonance frequency of the FBAR between temperature was a good linear relationship ( non-linear error of 6.4 % and 4.2 %) , respectively , and both have a good non- hysteresis and repeatability , thus proving the feasibility of the the FBAR temperature sensor . Subsequently, by a sealed air-type FBAR produced in the bulk silicon etching type FBAR backside sealing air and its temperature frequency characteristics were measured within the range of 20 ° C to 100 ℃ , the measurement results show that the sealing air improved FBAR TCF and no effect on the linear relationship between the resonant frequency and temperature . The finite element method is a commonly used method for the analysis of engineering problems . The last part of this article introduces the steps of finite element analysis and finite element analysis software ANSYS , ANSYS software FBAR three-dimensional finite element simulation , electrode materials , electrode thickness , piezoelectric film thickness parameter of the main analysis FBAR resonant frequency the impact .

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CLC: > Industrial Technology > Automation technology,computer technology > Automation technology and equipment > Automation components,parts > Transmitter ( converter),the sensor > Physical sensors > Temperature sensor
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