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The Effect of Polaron in Wurtzite GaN/Alx Ga1-x N Quantum Well

Author: DuanXuLai
Tutor: ZhaoFengZuo
School: Inner Mongolia Normal
Course: Theoretical Physics
Keywords: Wurtzite Quantum wells Polaron Energy
CLC: O471.1
Type: Master's thesis
Year: 2010
Downloads: 31
Quote: 0
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Abstract


In this paper, Lee-Low-Pines (LLP) variational approach to the wurtzite nitride quantum wells polaron effect , namely electron - phonon interaction delocalized polaron energy on impact . Consider the wurtzite quantum well optical phonon mode anisotropic phonon frequency wave vector and the variation of . Gives wurtzite GaN/AlxGa1-xN and InxGa1-xN/GaN free quantum well polaron ground state energy , the first excited state energy and the transition energy with quantum well width (L) and component (x) changes relationship . Numerical results show that : the quantum well wurtzite GaN/Al0.3Ga0.7N Polaron ground state energy of the first excited state energy, transition energy with quantum well width decreases with an increase and decrease in the quantum well is narrower obvious trend of small , wide quantum wells , the reduction of the speed becomes slow , finally approaching a three-dimensional value in the body material . Wurtzite quantum well is less than the energy of the polaron in quantum wells sphalerite polaron energy , while the former electron - phonon interaction on the polaron ground state energy contribution is greater than the corresponding value in the latter . This is mainly due to the anisotropy of wurtzite and sphalerite material parameters is different from the corresponding value caused. Wurtzite GaN/AlxGa1-xN and InxGa1-xN/GaN quantum well polaron ground state energy of the first excited state energy and the transition energy with Al / In composition increases , and when the well width is relatively narrow , the energy component of the more obvious changes with , and when the quantum well become more wide when this change tends to be slow. The results also show that , GaN/Al0.3Ga0.7N and In0.3Ga0.7N/GaN quantum wells Electronics - phonon interaction on the contribution of the polaron energy greater than these values ??GaAs/Al0.3Ga0.7As the corresponding value in the quantum well is much greater . Meanwhile, the use of LLP polaron energy method to calculate several different processing methods for analysis and discussion.

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CLC: > Mathematical sciences and chemical > Physics > Semiconductor physics > Semiconductive Theory > Semiconductor quantum theory
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