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Low-noise amplifier prospective study of the effects of electromagnetic interference
Author: XuLiGang
Tutor: LiJiaZuo
School: University of Electronic Science and Technology
Course: Electronic Science and Technology
Keywords: LNA Pulse Effect Simulation Injection experiment
CLC: TN722.3
Type: Master's thesis
Year: 2010
Downloads: 82
Quote: 1
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Abstract
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Front-end low-noise amplifier ( LNA ) in the communication the receiving system , is typical of high-power microwave ( HPM ) \This article aims to LNA theoretical analysis and experimental study of the effects of microwave pulse , so as to gradually understand and master the microwave pulse the LNA process and effect mechanism , to provide a technical basis for microwave front HPM protection . The paper briefly introduces the research background significance and research status ; followed by the LNA theoretical analysis and key technologies were introduced this based on a the LNA effect circuit model to complete the design of the the LNA effect of sample processing , debug, test results show that to achieve the desired performance indicators ; followed to carry out the weak links of the the LNA electromagnetic pulse caused by the possibility of failure causes ; carry out another the LNA effect simulation study , the microwave pulse width, power and other parameters were simulated . Paper structures the dynamic effect of the injection method experimental system , the contrast effect simulation , LNA effect injected into the experimental study ; Finally, the comparison of the data analysis of experimental results and circuit simulation for the LNA into the LNA different microwave pulse width, power and other parameters gain effect Law summary , simulation results and experimental data are basically the same , indicating that the effectiveness of the microwave effect of SPICE circuit simulation - based research methods ; simulation and experimental studies have shown that the injection power LNA gain pressing time studied in this paper has a saturation value , the microwave pulse width of 150ns-250ns , and thereafter gain pressing time is longer with the microwave injection pulse width change significantly . Finally, the paper also carried out for certain types of BJT LNA effect mechanism of microwave pulse , gives a qualitative physical interpretation of the line of research on the effect transistor pulse effect mechanism of a brief discussion .
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CLC: > Industrial Technology > Radio electronics, telecommunications technology > Basic electronic circuits > Amplification technology,the amplifier > Amplifier > Low-noise amplifier
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