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Investigation into ZnO Thin Film Transistors Prepared by Sol-gel Method

Author: HuangYiPing
Tutor: ZhangDaoLi
School: Huazhong University of Science and Technology
Course: Materials Physics and Chemistry
Keywords: Zinc oxide Silica Thin-film transistor Sol - gel method .
CLC: TN321.5
Type: Master's thesis
Year: 2011
Downloads: 60
Quote: 0
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Abstract


The thin film transistor is a use of an electric field between the gate and the source and drain electrodes to change the conductivity of a semiconductor thin film material of the insulation gate type field effect transistors, is a core element of an active matrix liquid crystal display technology . Zinc oxide is a wide band gap , a direct band gap compound semiconductor material having a high transmittance in the visible region , the electron mobility under the room temperature is higher, and light sensitivity is weak, and the stable performance of the devices prepared . In this paper, the basic properties of zinc oxide and silicon dioxide films and preparation methods . Zinc oxide and silicon dioxide films were prepared by sol - gel method . By thermogravimetry - differential thermal analysis concluded that the growth of the silica film particles basically completed around 485 ℃ , the zinc oxide thin film grain growth and the formation of the crystal orientation is basically completed around 500 ℃ . Different preheating temperature of the grain orientation of ZnO thin films by X-ray diffraction analysis . By scanning electron microscopy , the contrast of different substrate film grain size . UV - visible spectrophotometer , the transmittance of the thin film layer to fit the optical band gap of the film . This paper focuses on the preparation of zinc oxide thin film transistor parameter extraction method . Sol - gel method zinc oxide and silicon dioxide films prepared on ITO glass substrate , the resulting silica / zinc oxide composite films visible light transmittance of 80 % or more . Then prepared by magnetron sputtering Au source and drain electrodes , forming a bottom gate thin film transistor structure . Through the characterization of the performance of the semiconductor device , the resulting thin film transistor is an n-channel device , the working mode for the enhanced off current ratio of about 10 to 4 , the threshold voltage of about 3 V, the channel mobility of about 6.95 cm ~~ V s .

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CLC: > Industrial Technology > Radio electronics, telecommunications technology > Semiconductor technology > Semiconductor transistor ( transistor ) > Transistor: according to the process > Thin-film transistor
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