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Determination of the Electromechanical Coupling Coefficients of Transeversely Isotropic Piezoelectric Thin Films by Nanoindentation

Author: WangJiaShi
Tutor: ZhengXueJun
School: Xiangtan University
Course: Materials Physics and Chemistry
Keywords: Nanoindentation Finite Element Simulation Transversely isotropic piezoelectric film Forward analysis Reverse analysis
CLC: TB383.2
Type: Master's thesis
Year: 2010
Downloads: 46
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Abstract


Nanoindentation technique because it is simple, fast, small sample size, accuracy and high, become a common method for the characterization of the mechanical properties of the film material. However, due to the impact of the base effect in the the indentation response process in making the test results do not reflect the true mechanical properties of the film material. Therefore, to study the mechanical properties of the film material in the case of considering the substrate effect become the hot issues of today's materials research in the field. Film based systems nanoindentation load curve fitting synthetic exponential function form, through which the load curve index quantitatively reflect the size of the base effect. In the case of considering the substrate effect, through a combination of finite element simulation and nanoindentation experiments to determine the electromechanical coupling coefficients of transversely isotropic piezoelectric thin film materials. The main work of this paper is divided into four parts: 1. Consider the impact of the base effect, the use of finite element simulation of isotropic elastic membrane substrate system load curve index material mechanics parameters, the indentation depth relationship. Quantitative indentation process of film-based systems, the base effect of the load curve index linked, factor defines a characterization of the base effect. Determine the Young's modulus of the film material through a combination of nano-indentation experiments, using the load curve in the reverse analysis index. In the case of considering the substrate effect, a method for determining the the transversely isotropic film material elastic parameters of the method. Forward analysis for not consider the piezoelectric effect transversely isotropic film material, to get the maximum loading force analysis and finite element simulation dimensionless, between the load curve index film material elastic parameters of immeasurable Gang equation. ZnO thin film material is deposited on a silicon substrate indentation curve, the experimental indentation curve maximum loading force and loading the curve exponent substituting into the forward-analysis process established in the reverse analysis by nano-indentation experiments dimensionless equation solving the elastic parameters of ZnO thin film materials without considering the piezoelectric effect. 3. Consider the piezoelectric effect and the base effect of transversely isotropic piezoelectric thin film materials in the indentation process, the piezoelectric coefficient and dielectric coefficient as a known finite element simulation parameters established in the forward analysis consider the maximum loading force in the case of the piezoelectric effect, between the load curve index film material elastic parameters of the dimensionless equations. In the reverse analysis of experimental data using nanoindentation of ZnO thin films, the maximum loading force curve and load curve index is loaded into the forward analysis to establish the dimensionless equations, solving considering the piezoelectric effect of ZnO films The elasticity of the material parameters, and does not consider the result of the piezoelectric effect compared, the results are more reasonable when considering the piezoelectric effect. In the case of considering the substrate effect, determine transversely isotropic piezoelectric thin film materials piezoelectric coefficient. Forward analysis, when the elastic stiffness coefficient known, through the non-dimensional analysis and finite element simulation to obtain the maximum loading force transversely isotropic isotropic piezoelectric thin film materials indentation process load curve index piezoelectric coefficient between the dimensionless equations. Obtained by the nano-indentation experiments the reverse analysis, ZnO and PZT-6B indentation curves of a thin film material is deposited on a silicon substrate, the maximum loading force and the load curve of the experimental curve index substituting forward analysis established immeasurable Gang equation, obtained ZnO and PZT-6B piezoelectric coefficient of thin film materials.

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