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The Fabrication of All-optical Switches Based on Active Photonic Band Gap Bragg-spaced Multiple Quantum Wells

Author: HuZhiQiang
Tutor: WangTao
School: Huazhong University of Science and Technology
Course: Optical Engineering
Keywords: all-optical switch bragg multiple quantum wells photoluminescence double crystal X-ray diffraction LP-MOCVD
CLC: TN256
Type: Master's thesis
Year: 2011
Downloads: 25
Quote: 1
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Abstract


Optical switches are the core device of light exchanging in all-optical communication network. Traditional optical switches are limited their response time due to various of inevitable factors, while all-optical switches are gained more attention and study by the researchers for their good optical performance and faster switching speed.The author researches on the theory of semiconductor multiple quantum wells ultrafast all-optical switches based on InGaAsP/InP active photonic band gap Bragg structure in this article. To avoid the cumulative effect of carriers, the all-optical switches use nonlinear mechanism of optical Stark effect and are by near-resonant excitation mode. One-dimensional photonic crystal structure of the photonic band gap can form in the photonic band when the quantum well period meets the modified Bragg condition and Bragg frequency is equal to the heavy hole exciton resonance frequency. When the narrow line width pump is also in the band gap, optical switches have large non-linear and ps magnitude of the recovery time, therefore, it can form THz-level all-optical switches.The researcher does LP-MOCVD(Low-pressure Metal Organic Chemical Vapor Deposition) technology growth and analyzes the crystalline quality of epitaxial films through photoluminescence spectra test and double crystal X-ray diffraction test. The effects of growth temperature, pressure,Ⅴ/Ⅲratio,Ⅴ/Ⅴratio,Ⅲ/Ⅲratio, interrupting growth technology to crystalline quality of epitaxial films are analyzed in this research. The author masters a variety of conditions and parameters in the growth process of InGaAsP/InP and InAsP/InP quantum well MOCVD by a lot of experiments. Also, the author establishes the relationship between InGaAsP/InP quantum well structure’s exciton wavelength, bragg reflect wavelength and temperature according to experimental data. What’s more, the author revises relevant theoretical parameters regarding to experiments. In order to use in optical communication band, we can change the wavelength of all-optical switches due to the component design of quantum well.

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CLC: > Industrial Technology > Radio electronics, telecommunications technology > Photonics technology,laser technology > Optical waveguide and integrated optics > Integrated optical devices
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