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Study of CVD Growth Kinetics Model for Silicon-based Strained & Relaxed Materials

Author: JinGuoQiang
Tutor: DaiXianYing
School: Xi'an University of Electronic Science and Technology
Course: Microelectronics and Solid State Electronics
Keywords: The silicon strain and relaxation material Growth kinetics Growth Rate Model GROVE theory
CLC: TN304.12
Type: Master's thesis
Year: 2011
Downloads: 18
Quote: 0
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Abstract


SiGe / Si heterojunction materials more widely, good quality SiGe film became the basis for its application . Growth of SiGe film a variety of ways , including the use of the CVD method is more common . SiGe film growth process is very complex , related to a number of factors , such as temperature , pressure , gas supply, flow , many researchers have their growth process and growth kinetics of research, a lot of results . This paper describes the silicon growth mechanism of strain relaxation material growth method , the growth kinetics of the research study . The RPCVD growth of technology , the gas source for the SiH 4 SiH 2 Cl 2 and GeH 4 and H 2 < / sub > . The growth temperature was 625 ° C , 900 ° C , by changing the flow rate and temperature to obtain a different deposition rate . Grove theory and Fick's first theory was first proposed and established for silicon strain and relaxation of thin film materials CVD growth dynamics model . Previous silicon germanium / silicon heterojunction material growth kinetics model considering only the control of surface reaction , the paper taking both surface reactions and vapor transport control mechanism gives a model in the limit case of the two control mechanisms , the model applies not only to the low - temperature silicon germanium / silicon strain characterization of heterojunction material growth , also applies to the characterization of the high - temperature silicon germanium / silicon the relaxation heterojunction material growth characterization . Finally, the model calculations and experimental values ??are compared both low temperature ( 625 ° C ) or high temperature (900 ℃) , with the experimental values ??was better . The model structure is simple , clear physical meaning , suitable for high and low temperatures of the gas source system under strain and relaxation SiGe material RPCVD the description of the growth kinetics .

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CLC: > Industrial Technology > Radio electronics, telecommunications technology > Semiconductor technology > General issues > Material > Elemental semiconductors > Silicon
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