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Transition metal doped TiO_2 Preparation , structure and magnetic properties of

Author: ZhangHaiFeng
Tutor: WangQing
School: Lanzhou University of Technology
Course: Condensed Matter Physics
Keywords: Magnetron sputtering Substrate temperature Co-TiO2 films Diluted magnetic semiconductor Ferromagnetic
CLC: TB383.2
Type: Master's thesis
Year: 2011
Downloads: 36
Quote: 0
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Abstract


TiO 2 film has good chemical stability, excellent optical properties and good electrical properties, and also has high photocatalytic efficiency, no secondary pollution, which in the electronic materials, optical materials and Solar has a broad application prospects. TiO 2 is a wide bandgap semiconductor materials based on TiO 2 magnetic semiconductor research will help develop an integrated optical, electrical and magnetic devices in one of the research and development in recent years, to become the focus of attention. By adjusting the sputtering parameters paper, prepared a series of metal-doped TiO 2 thin films, and the morphology, structure and magnetic properties, and other related materials were studied. The substrate temperature was maintained at 300 ℃ -480 ℃ Deposition of different temperatures of a series of TiO 2 film, and the film annealed in air. Experimental results show that the substrate temperature of TiO 2 crystalline state of the film, the crystal structure has a great influence. The substrate temperature was 420 ℃, 450 ℃ and 480 ℃, the crystal structure of the performance of anatase and rutile phases coexist in the other substrate temperatures then only anatase phase. TiO 2 the film deposition process to maintain the substrate temperature at 150 ℃, for the films at different annealing atmosphere. Experimental results show that annealing in vacuum TiO 2 film showed amorphous structure; in the air and pure oxygen annealing TiO 2 the performance of the film of anatase mineral structure, and the degree of crystallization is good; in an argon gas atmosphere in the annealing treatment TiO 2 film of anatase and rutile phases coexist. The substrate temperature was kept at room temperature, under different oxygen-argon ratio prepared TiO 2 film, and in air after annealing. The results show that the oxygen flow during the preparation of relatively small samples were air-annealed film, the structure of rutile phase; oxygen flow relatively large film samples were annealed in air, the structure of the anatase phase. Substrate temperature was maintained at 300 ℃, prepared with different metal doped Fe-TiO 2 , Co-TiO 2 film. The experimental results showed that with Fe, Co doping increases, TiO 2 thin films gradually from anatase to rutile phase transition, and as Fe, Co further doping, will curb crystallization of the film. Deposited at room temperature were prepared with different Co doping TiO 2 film. Experimental results show that the Co-TiO 2 Series film samples were observed ferromagnetism, magnetization increases with the Co concentration increased and then decreased in the doping amount of 12% rutile films to obtain the maximum magnetization 11.2 emu/cm3, the maximum force of 190 Oe coercive appears in the doping amount of 9% of the rutile film.

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