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The use of nano-imprint technology to prepare photonic crystal LED research

Author: QiuFei
Tutor: XuZhiMou
School: Huazhong University of Science and Technology
Course: Physical Electronics
Keywords: Light-emitting diodes Nanoimprint Photonic crystals
CLC: TN312.8
Type: Master's thesis
Year: 2011
Downloads: 132
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Abstract


Because of high efficiency , reliability, low power consumption and stability advantages , light emitting diodes (LED) as a new generation of lighting gained rapid development . However, due to the high refractive index of GaN (n = 2.46) causes light to escape from the GaN- critical angle of about 24 degrees , LED light extraction efficiency with only 4%. Photonic crystals as an effective increase LED light extraction efficiency of the method , has been extensively studied over the past decade . This thesis mainly blue band photonic crystal design and preparation of photonic crystal LED nanoimprint research. Rsoft software using four common photonic crystal structure of analog design , combined with the expansion of the electrode preparation process , and ITO conductive effects were analyzed and compared , the final choice triangular array of air holes in the photonic crystal structure , photonic crystal optimization parameters is the duty cycle Rp = 0.8 , the cycle a = 418nm, the radius r = 167nm. Experiments using nanoimprint lithography and ICP (inductively coupled plasma ) etching the blue LED on the P-GaN layer of the photonic crystal was prepared . In order to reduce damage to the LED technology , we nanoimprint and ICP etching parameters are improved, using the second nano-imprinting , soft embossing , and low RF power ICP etching method of photonic crystal pattern was prepared . Experimental results show that the photonic crystal pattern is successfully transferred to the P -type layer , a diameter of about 312nm, period of about 410nm, the error is less than 7%. Photonic crystal etching depth of 70nm LED epitaxial wafers no graphical comparison of the LED epitaxial wafers photoluminescence intensity increased two -fold. At 350mA current injection conditions, the etching depth of 70nm and 100nm contrast photonic crystal LED chip LED chip without graphics optical power were increased by 10 % and 7% , relatively non- graphical photonic crystal LED LED forward voltage changed little.

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CLC: > Industrial Technology > Radio electronics, telecommunications technology > Semiconductor technology > Semiconductor diode > Diodes: structure and performance > Light-emitting diodes
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