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Performance of Ni electrode paste and in multilayer chip PTCR Applications

Author: ZhuRong
Tutor: LiuHuan;ZhengZhiPing
School: Huazhong University of Science and Technology
Course: Microelectronics and Solid State Electronics
Keywords: Multilayer Chip PTCR Ni internal electrode Ni powder particle size Antioxidant Shrink match
CLC: TN04
Type: Master's thesis
Year: 2011
Downloads: 23
Quote: 1
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Abstract


To meet the miniaturization of electronic devices , lightweight, high-performance , low-power development needs , multilayer chip PTCR emerged. As \In this paper, using the restore - re-oxidation of barium titanate prepared firing process (BaTiO 3 ) within the base stack of Ni electrode paste PTCR carried out research work . Ni powder with different particle size , respectively, 0.2μm, 0.6μm, 1μm, for the preparation of Ni electrode slurry . First, different size Ni powder related properties were studied on this basis to study the Ni powder particle size of the prepared Ni electrode slurry properties , including permeability characteristics of the electrodes burn , ohmic contact properties, oxidation , conductivity , shrinkage , etc., and properties of the laminated PTCR . Ni electrode paste the above article as a multilayer chip PTCR the inner electrode , the oxidation of Ni inner electrodes on PTCR Ceramics . The results show that when the heat treatment temperature is higher than 800 ℃, , Ni electrode is oxidized , an ohmic contact with the ceramic body is destroyed, the room temperature resistivity PTCR stacked up , up resistance decreased . To improve the internal electrode and the ceramic layer of metal matches the interface , the Ni electrode slurry was added 5% BaTiO 3 . Found that after adjustment , Ni electrode sintering starting temperature increase , sintering shrinkage rate has dropped, stacked PTCR room temperature resistivity decreased lift-drag ratio was not affected. This is the first pair of multilayer chip PTCR Ni powder with a particle size on the inner electrode device electrical properties were studied, and the use of added BaTiO 3 Ni- slurry as the inner electrode, prepared multilayer chip PTCR room temperature resistivity of 4.5 ? , lift-drag ratio of 3.7 orders of magnitude.

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