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Study on the Preparation and Characterization of InN Thin Films by RF-MBE

Author: GuoZhongJie
Tutor: GaoFuBin
School: Jilin University
Course: IC Engineering
Keywords: Molecular beam epitaxy The growth of the buffer layer Heterojunction InN films
CLC: TN304
Type: Master's thesis
Year: 2011
Downloads: 91
Quote: 1
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Abstract

Inn as a band gap of approximately 0.7eV direct band gap semiconductor, and the gallium nitride (GaN), aluminum nitride (AlN) , and has an important role not only in the optoelectronic devices , and in the ultra high speed microelectronic devices , photoelectric integration and the UHF microwave devices have very broad application prospects , especially regulation through the AlGaInN alloy components can be obtained from 0.7eV to 6.2eV direct bandgap structure continuously adjustable , which means that a single system semiconductor the material will be able to prepare a photovoltaic device of the spectral range from infrared to DUV . Relative to the sapphire , gallium nitride and silicon carbide substrate material , silicon and indium nitride epitaxial thin film crystalline quality is poor , but the silicon substrate has incomparable advantages of some other material , such as silicon wafer production process maturity , which will help scale industrialized production . So good crystalline quality the Si substrate InN epitaxial film becomes extremely important. This thesis through chemical cleaning, high - temperature annealing treatment , the silicon substrate by RF-MBE (radio frequency plasma excited molecular beam epitaxy) to obtain good crystalline quality InN buffer layer . Focuses on the In source temperature and substrate temperature buffer layer In / N atomic ratio , surface morphology , X -ray diffraction and photoluminescence spectra . Inn subsequent high-temperature growth is carried out in the buffer layer under the conditions of the obtained optimum growth . Been confirmed by X - ray diffraction spectrum , only the (002) diffraction peak and the diffraction peak ( 004) Second stage of the epitaxial film , the ( 002) diffraction peak half- width of 0.1752 ° , the c - axis lattice constant of 0.5709nm ; through a scanning electron microscope confirmed that the regular shape of the growth of InN epitaxial film , are hexagonal , and island growth ; can be seen through an atomic force scanning photo rms roughness of only 6.29nm . The InN film grown on the p-Si substrate formed the n-InN/p-Si heterojunction diodes, by conventional vacuum evaporation techniques at the back of the p-Si substrate was evaporated Al as the back electrode side of the n -Inn pressure indium . IV curve under the current - voltage source measurement had the device at room temperature and liquid nitrogen temperature , the turn-on voltage 2.01V and 3.41V , which also proves that the band gap of InN and Si has a negative temperature coefficient , and electroluminescence spectrum were measured.

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