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Synthesis and Photovoltaic Property of BiFO3 Thin Films

Author: HuangDongZuo
Tutor: ZuoJunHao；YangPingXiong
School: East China Normal University
Course: Microelectronics and Solid State Electronics
Keywords: Bismuth ferrite films Sol - gel Bandgap PV voltage
CLC: O484.4
Type: Master's thesis
Year: 2011
Downloads: 480
Quote: 1
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Abstract


Bismuth ferrite (BiFeO3) at room temperature as a minority both ferroelectric and antiferromagnetic perovskite materials, one of the researchers has been subjected to widespread concern. Studies have shown that bismuth ferrite has good ferroelectric, ferromagnetic and optical properties, in the non-volatile memory, dynamic random access memory, spintronic devices, sensors, and so has a very broad application prospects. Meanwhile, iron bismuth as a narrow band gap ferroelectric to the ferroelectric material and the specific characteristics of the spontaneous polarization of the visible wavelength band gap to overcome the traditional solid-state solar cell bandgap voltage limit, the ferroelectric thin film material can produce the photovoltaic effect for the future efficient and stable solar cells, and the corresponding development of optoelectronic devices, providing a new way. In this thesis, the sol - gel method a pure phase bismuth ferrite thin films, and choose lanthanide doped bismuth ferrite films improved optical performance. Specific findings are as follows: (1) using acetic acid and ethylene glycol as a solvent and stabilizer, the successful preparation of a precursor of iron and bismuth lanthanum-doped bismuth ferrite precursor; respectively, in a silicon substrate, lanthanum-nickel substrate and quartz substrates fabricated iron and lanthanum-doped bismuth bismuth ferrite films. (2) using X-ray diffraction, respectively, of different substrates and different annealing temperatures, different lanthanum-doped (0-10%) bismuth ferrite microstructure of the film; using scanning electron microscopy studies of silicon and lanthanum-nickel substrate bismuth ferrite thin films on the surface morphology and cross-sectional view; using atomic force microscopy study of lanthanum-doped bismuth ferrite thin three-dimensional surface topography. (3) use of dielectric, ferroelectric phase related instruments of pure bismuth ferrite thin film dielectric constant and dielectric loss of the relationship with the external electric field and ferroelectric properties. Tested using ellipsometry to study the silicon substrate doped bismuth ferrite and lanthanum bismuth ferrite thin films optical constants; using a transmission test, analyze the fit of the quartz substrate lanthanum-doped bismuth ferrite and the transmittance of bismuth ferrite thin films mapping and band gap. Test results obtained bismuth ferrite thin band gap of approximately 2.74eV. As doping increases, the band gap has decreased after increasing changes. (4) studied the effect of bismuth ferrite thin film photovoltaic principle, the initial build bismuth ferrite thin film photovoltaic test structures. Silica and nickel tested lanthanum bismuth ferrite thin films on a substrate at different annealing temperatures and different film thicknesses photovoltaic effect. Study analyzed the different lanthanum doping test pin impact of distance on open-circuit voltage. Test found growing in LaNiO3 bismuth iron on the substrate film obtained larger open circuit voltage, and the voltage value with the test pin distance increases. La doping some extent, improve the open circuit voltage of the film.

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CLC: > Mathematical sciences and chemical > Physics > Solid State Physics > Thin Film Physics > The nature of the films
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