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The Study of Cluster Growth Processes by Direct Simulation Monte Carlo Method in Cluster Sources

Author: ZhangLianHua
Tutor: LiGongPing
School: Lanzhou University
Course: Particle Physics and Nuclear Physics
Keywords: DSMC method Clusters source The cluster size The diameter of the exit port
CLC: O561
Type: Master's thesis
Year: 2011
Downloads: 29
Quote: 0
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Abstract


Clusters deposited as thin film as a new technology to receive widespread attention. It is not only difficult to conventional method can grow a film composite material, but also than the desired molecular beam epitaxy under conditions of low temperature. At present this technology has been used to prepare high performance metals, semiconductors, oxides, sulfides and organic films. As film properties Properties of the clusters, so the formation of clusters is particularly important. In this paper, we use the direct simulation Monte Carlo method (DSMC), Fortran language assembler and self-built model to study the cohesion clusters in the gas source and gas aggregation cluster magnetron sputtering source affected the growth of clusters various factors. The specific content of the paper and the results are summarized as follows: 1. Simulated clusters of gas condensation source different cavity length, different temperatures and different wall of the content of the inert gas conditions, Cu clusters size distribution. Simulation results show that: the longer length of the cavity, resulting in a large proportion of larger clusters; wall the lower the temperature, resulting in a large proportion of larger clusters; higher content ratio of the inert gas, resulting in large clusters smaller proportion; same content under inert gas, He / Ar ratio is higher, the greater the proportion produce large clusters. 2 The analog sources of gas condensation cluster size and the center of the exit port different conditions, Cu, and the cluster size distribution simulates the growth over time, changes in the number of cavity clusters. The results showed that: the larger the diameter of the exit port, resulting in a large proportion of the smaller clusters; equal to the diameter of the lead exit the case of deviation from the center of the exit port than in the origin of the coordinate origin produced to a large proportion of large clusters ; the growth over time, the number of clusters cavity after first becoming fewer and more. 3 simulates the gas cluster source magnetron sputtering Cu (Cu-) content ratio of different conditions, Cu clusters size distribution. The simulation results show that: with the content ratio increases, the cluster size distribution narrowed, uncharged clusters increase in the proportion of copper clusters distributed uncharged maximum reduction; and gas condensate source of charged clusters Clusters scale of zero compared with the corresponding positive charge and a negative charge ratio of clusters increases first and then decreases; same content ratio, the clusters of positively charged and negatively charged size distribution of clusters The size distribution substantially the same; initial ratio of Cu Cu-content ratio is large, the output is mainly negatively charged clusters, not charged with positive charge and a small percentage of clusters; Cu-content ratio of the increase, Cu-cluster size distribution is reduced.

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CLC: > Mathematical sciences and chemical > Physics > Molecular physics, atomic physics > Molecular Physics
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