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Studies on the Binding Energies of Impurity States in a Strained Wurtzite GaN/AlxGa1-xN Quantum Dot and Electron Wave Functions in the GaN/AlxGa1-xN Coupled Quantum Dots

Author: ZhangWenQiang
Tutor: ZuoZuWei
School: Inner Mongolia University
Course: Condensed Matter Physics
Keywords: Quantum dots
CLC: O471.1
Type: Master's thesis
Year: 2011
Downloads: 28
Quote: 0
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Abstract


In the effective mass approximation, discussed the GaN/AlxGa1 - xN strain cylindrical quantum dot kind of hydrogen impurity state binding energy and field presence coupling GaN/AlxGa1 - xN cylindrical quantum dot z direction electronic ground state wave function. First of all, considering strain and hydrostatic pressure, using the variational method for calculation of infinite high strain cylindrical quantum dot kind of hydrogen impurity state binding energy. The results show that the quantum dot size smaller cases, strain increases the impurity state binding energy. In the quantum dot size larger cases, strain reduced impurity state binding energy. As A1 components increase impurity state binding energy decrease. Impurity state binding energy with hydrostatic pressure increase with the increase of the quantum dot size smaller. In the case, hydrostatic pressure on impurity state binding energy of the more obvious influence. Secondly, the transfer matrix method research field under coupling cylindrical quantum dot z direction electronic ground state wave function. Numerical results show that the quantum dot height, intermediate base layer thickness, A1 component content x, electric field intensity on the z direction electronic ground state wave function influence is bigger, determines the z direction electronic ground state wave function of the distribution.

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CLC: > Mathematical sciences and chemical > Physics > Semiconductor physics > Semiconductive Theory > Semiconductor quantum theory
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