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Investigations on the Resistive Switching Properties of HfSiO4 Thin Films and Conduction Behaviors of RuTa Thin Films for the Applications in Semiconductor Devices

Author: GuoKang
Tutor: XiaZuoDong
School: Nanjing University
Course: Materials Physics and Chemistry
Keywords: Resistive memory HfsiO4 RuTa Anderson transition
CLC: TB43
Type: Master's thesis
Year: 2011
Downloads: 70
Quote: 1
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Abstract


With the development of the modern semiconductor technology, the device scale reduced gradually reach the physical limits, and further it has become very difficult to improve the memory device integrated. In order to solve these problems, people must rely more on the introduction of new device designs and new materials. The semiconductor industry has long been exploring a high-density, fast, low-power, non-volatile memory. In recent years, based on the memory device changes by the controllable resistance of the material, i.e. the development of the resistance change memory (RRAM) compelling. It has a simple structure, fast write / erase capability, low power consumption, high storage density, single device can be reduced to tens of nanometers. In the the alternative resistance change material, hafnium silicon oxide film (HfSiO4) is a high feasibility and low risk of new non-volatile memory material. HfSiO4 has been successfully applied to the high-k materials as gate dielectric CMOS technology of 45nm and below technology nodes, its production, as well as a series of the industrialization process is already quite mature. Its compatibility with conventional semiconductor integrated process better and better stability. Resistance change memory HfSiO4 Films In this paper, process and technology, and their microstructure and material properties, its unipolar resistive transition mechanism. The experimental results show that the HfSiO4 materials have great potential for applications in next-generation memory devices. In addition, Ruta alloy as a next-generation memory electrode material and the MOSFET gate electrode material, in the present work, we also on the the RuTa film physical characteristics and conductive characteristics conducted research. The main work of this paper are as follows: 1, optimized a method using the pulsed laser deposition technique the preparation HfSiO4 film and the completion of the preparation and performance measurement of the resistance of the storage unit. The devices showed typical unipolar type resistance varying characteristics after 10V forming operation, HfSiO4. Its high and low impedance state ratio of up to 104, at least can be kept at room temperature for more than 8 × 104s without obvious changes in resistance. The number of times of the switch is more than 800 times, and show good stability. These characteristics indicate HfSiO4 a novel resistance variable can be used as the storage material. Resistive mechanism HfSiO4 film study of high HfSiO4 resistance change memory element, the low resistance state conduction mechanisms respectively. By Niklasson and Brantervik methods, respectively, the high and low resistance states corresponding conductive mechanism. The study showed that the resistance change of state of the transition behavior of the conductivity mechanism is closely related to the oxygen vacancy defects. The \Based on the theory of correlated barrier hopping (CBH) discloses Resistive process interrelated defects within the material between the barrier with the defect position changing the laws of physics, seepage links with the cutting of the conductive network of the physical image thus obtained. In the high-impedance state when the distance between the oxygen vacancies, resulting in charge transfer barrier, follow the Poole-Frenkel mechanism so that the conductance mechanism. A certain voltage is applied on the device, the migration and accumulation of oxygen vacancies in the voltage driven certain seepage clusters form occurs, the distance between the oxygen vacancy is reduced, and the potential barrier between the oxygen vacancies also decreased. Energy conduction electrons between the oxygen vacancies only need a small enough when the distance between the oxygen vacancies can transition, along with a significant increase in the conductance of the device in the macro performance for low resistance state, and thus exhibit low resistance state A seepage conductive behavior. 3, RuTa electrical properties studies using magnetron sputtering metal alloy RuTa film without annealing the sample in an amorphous state. Films unannealed and annealed crystallization process of the changing nature of the conductive metal into a semiconducting behavior conductive behavior. The TEM photograph of the film characterized by the crystallization process. Anderson localization theory, we believe that this conductivity change the way related with the degree of disorder of the crystal inside. Ec of the relative position with the film decrease of the degree of disorder, the EF and mobility of the material edge is changed from the local state to the extended state transition electronic state thus occurs, the film will take place by the degree of disorder caused by changes from an insulator transition to metallic conductivity behavior

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