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Study of SiN x -Doped SbTe Phase-Change Materials for Phase-Change Random Access Memory

Author: WanZuoJian
Tutor: FengJie
School: Shanghai Jiaotong University
Course: Microelectronics and Solid State Electronics
Keywords: Phase Change Memory SiNx doping SbTe RESET current Thermal stability Data Shelf Life
CLC: TP333
Type: Master's thesis
Year: 2012
Downloads: 35
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Abstract

With the rapid growth of the consumer electronics market in recent years, the memory market is growing, the most widely used non-volatile memory is a flash memory based on floating gate technology. However, due to restrictions on its physical mechanism, further narrowing of the flash memory cell size encountered many technical bottlenecks. A phase change memory (Phase Change Random Access Memory, referred to as PRAM), is considered as having a memory cell size is small, non-volatile, long cycle life, low power consumption, fast read / write speeds and the existing CMOS process compatibility and other advantages is most likely to replace flash memory become common in the future of a new generation of memory technology. Currently, the widespread adoption of the phase change material in PRAM is a Ge-Sb-Te (GST) film, but its existence to some problems in need of improvement, such as RESET current is large, the data in the high temperature shelf life to be improved and so on, it is difficult to meet future non-volatile memory requirements for low power consumption, data stability. In this regard, it is the SST material doped Sb ₂ Te ₃ Si element so as to form. SST amorphous material has better thermal stability, higher resistivity of the crystalline state as well as lower the melting temperature, however, will be isolated in the crystallization process Te crystal phase is a big problem of the SST material interested The stability of the device have been affected. In order to both retain the advantages of the SST materials, but also weakened the Te crystalline phase generation, this paper attempts to doping of Sb2Te3 of SiNx, mainly for the following research: 1. Prepared the different concentrations SiNx doping SbTe film. Using XRD, TEM and in situ constant temperature annealing experimental study film composition, structure, properties, and electrical properties. XRD and TEM results show that after crystallization Sb2Te3 crystalline phase, distribution in the material, SiNx for a nano-composite material, the high resistance of the SiNx can be used as micro-heater is formed, and this structure can improve the resistivity of the crystalline state, thereby facilitating reduce the current of the device's RESET. Situ isothermal annealing experiment results show that the as the SiNx concentration increases the crystallization temperature of SiNx-SbTe material elevated increased resistivity of the amorphous and crystalline, data storage capacity is greatly improved. 2 Preparation SiNx-SbTe material-based phase change memory element prototype study the electrical properties and the transition mechanism. The device has a memory switching characteristics, and the ability to achieve the SET and RESET operations. The test results show that the device has prepared based the 5at.% SiNx-SbTe material memory switching characteristics, size, pulse width, the falling edge of the width of 2.2V-80ns-50ns pulse SET operation, 4.2V-20ns -5ns pulse RESET operation.

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