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Preparation and Properties of a TiAl2O5 Nanocrystal Charge Trapping Memory Device

Author: ZhouYue
Tutor: YinJiang；LiuZhiGuo
School: Nanjing University
Course: Condensed Matter Physics
Keywords: Dielectric High dielectric constant film Atomic Layer Deposition Pulsed laser deposition Charge trapping memory
CLC: TP333
Type: Master's thesis
Year: 2011
Downloads: 32
Quote: 0
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Abstract


In recent decades, the portable mobile electronic products growing application in the daily lives of people in a wide range of these products, Flash memory plays an extremely important role. Flash storage technology in the future development requirements can be summarized as the following: greater storage capacity, faster read and write operation consumes less power, longer data retention. Since the Flash memory concept is proposed, Flash memory has been a dominant position in the non-volatile semiconductor memory market, and now occupy nearly 90% of the non-volatile semiconductor memory market. Flash memory on the commercial application has achieved great success, the floating-gate Flash memory technology, along with the shrinking of feature size, the current mainstream floating gate memory with the expansion of technology encountered serious technical bottleneck, unable to meet The rapid development of today's IT requirements for high-density storage. Put a higher demand for speed, power consumption, and reliability of a series of storage performance. For next-generation non-volatile semiconductor memory technology R \u0026 D, there are two trends, one is as far as possible the current level of technology advancing to a higher technical. Another trend is completely different principles and new technology of the new storage technology has reached the physical limits. This article was prepared by a novel nanocrystalline charge trapping memory, and storage system. The main findings of this paper are as follows: 1. Preparation of TiO2 and Al2O3 amount of substance ratio of 1:2 ceramic target, preliminary study by PLD Ti0.2Al0.8Ox thermal stability of the films. The XRD tests show Ti0.2Al0.8Ox film in the film after the 800 ° C rapid thermal annealing to maintain the amorphous state; after annealed at a 900 ° C nitrogen atmosphere for 3 minutes after the addition of the (100) diffraction peak from the Si substrate, the diffraction angle 2θ of 44.3 ° occurs at a weak cubic phase TiAl2O5 crystallinity of (040) peaks, which indicates that at this temperature the film has begun to crystallization, precipitation TiAl2O5 Nanocrystalline. Prepared using the ALD and PLD method TiAl2O5 Nanocrystalline charge trapping memory, the CV characteristic of the memory, to obtain a 2.3 V Storage window, and regarded as the storage in TiAl2O5 Nanocrystals charge density of about 1 × 1013/cm2. Device failure time research TiAl2O5 nanocrystalline charge trapping memory data retention characteristics, flat-band voltage changes over time curves, and memory at the same time has a high-speed \. Nano-crystalline charge trapping memory TiAl2O5 further research work mechanism of memory microstructural characterization, high-resolution TEM images show that the memory substrate, tunneling layer, trapping layer barrier layer interface is smooth and clear, TiAl2O5 nm precipitation crystal Ti0.2A1080x film. By measurement of XPS valence band and the energy loss of the O 1s spectrum, we have drawn the energy band diagram of the memory device, and more profound analysis of the working mechanism of the memory.

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CLC: > Industrial Technology > Automation technology,computer technology > Computing technology,computer technology > Electronic digital computer (not a continuous role in computer ) > Memory
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