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The Analysis of Preparation and Dielectric Properties of PZT95/05 Films

Author: WeiZhiKui
Tutor: YuDaShu
School: Tianjin Normal University
Course: Materials Physics and Chemistry
Keywords: Sol-Gel process PZT95/05 ferroelectric thin films Dielectric relaxation Equivalent circuit
CLC: O484.42
Type: Master's thesis
Year: 2011
Downloads: 40
Quote: 0
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Abstract


Zirconium-titanium ratio of 95 /05 of lead zirconate titanate PZT phase diagram in the ferroelectric phase and the antiferroelectric phase in the vicinity of the phase boundary , at room temperature , and its structure is perpendicular to the antiferroelectric phase, when the pressure, temperature, and when the electric field and other factors , due to mutual conversion between the ferroelectric phase and the antiferroelectric phase , while having many exceptional electrical properties . Prepared by improved sol - gel (sol-gel) method Zirconium Ti ratio of 95:05 of the sol-gel and sintering PZT95/05 film , and in the best environment temperature . By Wayne Kerr 6500 precision impedance analyzer (PIA) performance testing and research of the system . The main contents of the following aspects : ( 1 ) optimize the PZT sol preparation , sintering , plated electrode polarization processing process . (2) by changing the ambient temperature of the sample analysis shows that its dielectric properties , the dielectric constant and dielectric loss factor of the sample are abnormal : When the Curie temperature Tc is reached . Draw out the sample at different temperatures of the Cole-Cole the experiment Figure , in addition to other than the Curie temperature , the rest of the temperature are found Davidson-Cole ( skew arc) model with the theoretical calculation to obtain a relaxation time distribution relationship . ( 3) the electrical properties of different bottom electrode specimen referral analysis and comparison : on the one hand , in the the platinum electrode PZT95/05 film dielectric constant than in the LNO bottom electrode , and a smaller loss . In the other hand, in the bottom electrode , LNO films exhibit good dielectric relaxation phenomena . (4) drawn through the equivalent circuit analysis of the samples : the First , PZT95/05 film with the general piezoelectric transducer , compared to the material belonging to the anti-resonant frequency greatly special piezoelectric oscillator ; Secondly, the simulation parameters of the equivalent circuit R1 = 1690 ( ? ) , C1 = 2.78 × 10 -13F , L1 = 1.392 × 10 -5H , Co = 5.84 × 10 -12F , R0 = 20 × 106 ( ? ) , and AC impedance spectroscopy model analysis , obtained k2 = 0.0454 (k = 21.2%), fs = 81MHz, Q = 4.2, where the electromechanical coupling coefficient is higher than the MPB reported phase boundary at PZT53/47 of components .

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CLC: > Mathematical sciences and chemical > Physics > Solid State Physics > Thin Film Physics > The nature of the films > Electrical properties of
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