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Research on the Memristive Properties of Hexagonal WO3 Nanowires

Author: HeXiongWu
Tutor: TangDongSheng
School: Hunan Normal University
Course: Condensed Matter Physics
Keywords: W03 nanowires RRAM oxygen vacancies electrical properties memristive properties
CLC: TB383.1
Type: Master's thesis
Year: 2011
Downloads: 54
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Abstract


Memories play a important role in semiconductor market. And with the population of portable consumer electronics products, high-capacity non-volatile memory are demanded for more and more urgent. Currently, Flash is dominant in memory area, occupying more than 80% market share. But as the coming of 28nm node, Flash memory encounters more and more bottlenecks, e. g., the gate leakage serious, low programming speed, high operating voltage etc. Recently, Resistive switching(RS) memory effects of metal/oxide/metal junctions, frequently called "RRAM" or "Memristor", which has great advantages on speed, endurance, retention, cell size, multi-level storage and compatible with silicon technology, have attracted much attention. It is one of the most promising candidates for next generation non-volatile memory. Tungsten trioxide as a typical RRAM material, the current research in the Resistive switching is still in early stages.Tungsten trioxide (WO3) one-dimensional nanostructures have been successfully synthesized in a simple hydrothermal method. The as-grown WO3 one-dimensional nanostructures were found to have uniform diameters with a crystalline hexagonal structure. The nano-device based on WO3 nanowires, which have a structure of’metal/semiconductor/metal’, were fabricated by conventional photolithography procedure. The as-prepared nano-device, which based on ohmic cantact, was investigated under room temperature and elevated temperature, which show different electrical behavior. The I-V curve recorded at room temperature shows linear and symmetric, while it trends more and more nonlinear, hysteretic and nonsymmetric under increasing temperature. We furthermore investigate the effect of bias sweeping rate, UV light illumination, and bias voltage excursion on the electrical transport properties of WO3 nanowire device to explore the temperature dependent memristive mechanism and potential application as memristors and rectifiers. The temperature dependent memristive properties of WO3 nanowires might be attributed to the temperature dependent drift of+2-charged oxygen vacancies under the electric filed induced by bias voltage. Two-terminal resistive random access memory (RRAM) model is also proposed based on individual WO3 nanowires, which can be written by a relatively large bias voltage and read by a small bias voltage. Furthermore, we also investigated the electric transport properties of the WO3 nanowires devices, which based on Schottky contacts, and we find that annealing、temperature and UV irradiation can strongly improve the Schottky contacts on the device.

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