About 24 item dissertation in line with RRAM query results,the following is 1 to 50(Search took 0.094 seconds)
- Resistive Random Access Memory Characters Research and Reading Writing Circuit Design,ChengZongZuo/Huazhong University of Science and Technology,0/28
- Resistance Switching Effect and Mechanism in Transition Metal Oxide Based RRAM Devices,WeiLinLin/Wuhan University of Technology,0/47
- Research on Resistive Switching Mechanism and Performance for Non-volatile Resistive Switching Memory,YangJin/Anhui University,0/12
- Study on the Fabrication of the Transparent Homojunction/Heterojunction and Resistance Switching Properties of NiO,ZhaoZhiJuan/Henan University,0/75
- Research on Mechanism of Switching and Endurance Failure in Oxide-based Resistive Switching Memory,LiuXiaoZuo/Shandong University,0/25
- Design of resistive memory devices, fabrication and characterization,YuYinFeng/University of Electronic Science and Technology,0/30
- Research of Resistive RAM Circuit,GuoCunZhuang/Xi'an University of Electronic Science and Technology,0/99
- Study on Construction and On-off Switching Properties of ZnO-based RRAM,SongKai/Tianjin University of Technology,0/121
- Memory of atomic layer deposited metal oxide resistance,ChenLin/Fudan University,0/284
- Research on Resistive Switehing Memory Based Binary Transition Metal Oxides,XieHongWei/Lanzhou University,0/122
- Resistive Switching Characterization of NiO:Li Film,WuSiDong/Northeast Normal University,0/48
- Investigation on Deposition of Vanadium Oxide Films by Rf-sputtering and Its MIT Proerties,WangZuo/Tianjin University of Technology,0/87
- Fabrication of Memristive Device Based on Metal Oxides and Study on Resistive Switching Memory and Synaptic Emulation,WangZhongQiang/Northeast Normal University,0/1
- Influence of Crystal Structure and Interface Modification on Resistance Switching Properties in TiO2films,KangZuo/Hebei Normal,0/7
- Observation of Effect of Juvenile Worms from Schistosoma Japonicum Infected with Retrovirus Containing hTERT Gene,YangShengHui/Central South University,0/45
- New memory in the FPGA application research of key technologies,XueXiaoYong/Fudan University,0/465
- Modeling and design of high-density non- volatile storage system,DingYiQing/Fudan University,0/246
- Research on the Memristive Properties of Hexagonal WO3 Nanowires,HeXiongWu/Hunan Normal University,0/54
- Roles of Silver Oxide in the Bipolar Resistance Switching Devices with Silver Electrode and Direct Observation of Local Resistance Switching in WO3 Films,DongChunYing/Hebei Normal,0/25
- The resistance memory RRAM the reliability study,WanHaiJun/Fudan University,0/390
- Methods and mechanism of metal oxide resistance change memory performance boost,GuJingJing/Fudan University,0/132
- Research on Electrical Characters of RRAM and Peripheral Interface Circuit,LiuGang/National University of Defense Science and Technology,0/102
- Resistive memory design of the high-density,ZhangZuo/Fudan University,0/81
- Fabrication of NiO Resistance Switching Device and Analysis of Its Electric Characteristics,ZhangYang/Tianjin University of Technology,1/118
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