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Resistive memory design of the high-density

Author: ZhangZuo
Tutor: LinYinYin
School: Fudan University
Course: Microelectronics and Solid State Electronics
Keywords: Nonvolatile Memory Resistive Random Access Memory RRAM sense amplifier write driver High Density 3D multi-layer 1TXR
CLC: TP333
Type: Master's thesis
Year: 2010
Downloads: 81
Quote: 0
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Abstract


In this paper, we investigate into the design of RRAM (Resistive Random Access Memory) in the quest for high density solutions. The design of the key peripheral circuit including sense amplifier and write driver is firstly presented in the paper. Then this paper reveals two 3D multi-layer high density structure:NOR type 1TXR structure and NAND type 1TXR structure. The read and write algorithms of the two structure are proposed respectively to promise the reliable work of the two structure. Thanks to the two structures this paper proposed, the storage density can be 280% and 500% higher than the traditional 1T1R structure.

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CLC: > Industrial Technology > Automation technology,computer technology > Computing technology,computer technology > Electronic digital computer (not a continuous role in computer ) > Memory
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