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Investigation on the Switching Characteristic of Binary Oxide Films

Author: GaoXu
Tutor: YinJiang；LiuZhiGuo
School: Nanjing University
Course: Condensed Matter Physics
Keywords: Nonvolatile memory Resistive random access memory Resistive switch Unipolar switch Bipolar switching Switching mechanism
CLC: TP333
Type: PhD thesis
Year: 2011
Downloads: 354
Quote: 0
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Abstract


Microelectronics industry has long been seeking a has a high storage density, fast programming, low-cost, low-power non-volatile memory even if the power is disconnected after the data is still able to save. With high storage density and low cost of production, Flash memory is now on the market mainstream products of non-volatile memory, Flash storage technology, however, there are some fatal weakness such as programming slow, high operating voltage endurance than the poor. In addition, along with the semiconductor device feature size decreases in 2016 to traditional storage technology based on the charge storage will come to the physical and technical limit to 22nm. The ferroelectric memory and magnetic memory by the device scaling challenges, the most important reason is difficult to remain stable enough to live in smaller and smaller devices electronic. Recently, the resistance change memory as a new type of non-volatile memory by the people's attention. Resistance change memory has a simple structure, programming speed, low operating voltage, low energy consumption, high density and 3D integration, more important is that it is based on charge storage mechanism. The resistance change memory is a metal - insulator - metal structure of the device, its resistance to external voltage signal modulation, the transition between the low-resistance state. So far, the resistive behavior is found in a variety of materials including metal oxide material, a solid electrolyte material and an organic material. Among the many materials, simple oxides due to the simple structure, stability and compatible with conventional CMOS processes, etc. become a focus for researchers. However, such materials resistive switching mechanism is still there is considerable controversy, which seriously hindered the resistance change memory applications in the future non-volatile memory technology. In this work, we studied the simple oxide thin film resistive behavior, including unipolar and bipolar resistive behavior. To the experimental results, focusing on the resistive switching mechanism is still there is considerable controversy, and to explore the feasibility of several simple oxide materials used in resistive memory. The main results of the work are summarized as follows: 1. First reported the cobalt tetroxide film unipolar resistive switching behavior. More than 200 times Pt/Co3O4/Pt single switching times of the components at room temperature devices, low-impedance, resistance value is greater than 5 × 103 devices, low-impedance, resistance remains after 16 hours did not show any declining trend . The high impedance of the device resistance decreases with increasing temperature, showing the semiconductor properties; low-impedance, resistance increases with increasing temperature, showing metallic. We believe that the formation and rupture of the non-stoichiometric ratio (oxygen content) cobalt oxide conductive path led to the cobalt tetroxide film resistive phenomenon. (2) to explore the feasibility of non-Chang lutetium oxide film applied to the resistive memory. We chose amorphous the lutetium oxide film, the main reason is accompanied by the development of the semiconductor industry will be close to the size of the device when the device feature size of less than 22 nm, the grain size of the polycrystalline oxide. In this case, the type of grain oriented and grain boundaries in each of the single components in random distribution will result in the type of device performance difference, while the use of an amorphous oxide material can be effectively for Free this problem. Amorphous lutetium oxide film has been studied candidate materials as a high-k gate dielectric material, the compatibility with the conventional CMOS process has been confirmed. Therefore, we selected the amorphous lutetium oxide film as the insulating layer, the unipolar resistive characteristics of Pt/Lu2O3/Pt device, to obtain a better experimental results: the device is high, the low-resistance state of the resistance value ratio is greater than 1 × 103, the programming time of less than 30ns, the device has experienced did not show any declining trend after 300 switching cycles and 3.2 × 106s hold. 3 in-depth discussion and analysis of of lutetium oxide film resistive switching mechanism. Our experimental results show that the switching process, the migration of the oxygen ions in the film played a very crucial role in the amorphous oxide film exclude the grain boundaries and other factors, we believe that the resistive behavior of such devices is conductive channel and The distribution of the vicinity of the oxygen vacancy related defects in the process of changing the resistance state of the device and re-distribution result. 4 was found in the the Pt / GaOx / ITO device and of Ti / gaox / ITO device switch in the opposite direction of the bipolar resistive switching behavior. In the two components of a single production process, by controlling the deposition temperature and cavity pressure in the gallium oxide film growth process, we can effectively avoid the formation of other materials to achieve the resistive switch must be experienced before. Comparative analysis, we believe that the oxygen vacancies in the electrostatic force caused by migration Pt / gaox interface Schottky barrier changes mainly due to the resistive switch is the Pt / gaox / ITO device, while the Ti / gaox, at the interface between the redox The reaction is lead the Ti / gaox / ITO device resistance becomes the main reason for switching behavior. Our results further confirmed the electrode and the thin film at the interface of oxygen vacancy migration has played a very crucial role in the process of resistive.

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