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Electrical bistable materials and devices

Author: GuoPeng
Tutor: XuWei
School: Fudan University
Course: Physical Electronics
Keywords: Organic thin film devices electrical bistability nonvolatile memory multilevel memory effect
CLC: TN383
Type: PhD thesis
Year: 2007
Downloads: 116
Quote: 0
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Abstract


There is a strong desire to develop new advance materials that can overcome the potentially limiting scaling difficulties present in the silicon-based semicondector devices. Among them, organic materials are promising candidates for electronical memory device in new information technologies. The use of organic materials provides a simplified manufacturing process yielding low-cost, flexible, and light-weight devices that have an active device area approaching the nanoscale. The so-called organic electrical bistable devices （OEBDs） based on organic molecule, which exhibits two different states of conductivities at the same applied voltage, is ideal for switch and memory used in digital circuits.In this paper, we introduced a series of cyano-substituted heterocyclic ktene aminal derivant materials and device structures that showed promise for memory applications, while also analyzing their metal-organic interface, retention times, cycling tests, and overall operation. Nevertheless, the technology at this stage has not yet matured, so hopefully we can encourage and provide motivation for further research in this area to provide future technology for memory applications.The specific experiments and results are listed as follow:1. A series of cyano-substituted heterocyclic ktene aminal derivant materials, such as BN4 and DBCN has been introduced. The nonvolatile rewritable memory characteristics of the M-O-M structural devices based on these molecules have been investigated and the negative differential resistance effect has been observed in the BN4 device.2. Electrical characteristics of a single-layer device using HPYM, which is the homologous compound with BN4, have been investigated. An Al/HPYM/Ag device has nonvolatile rewritable memory characteristics and the devices with Au/Ag, Ag/Ag and ITO/Ag combination have volatile memory characteristics.3. A thin Al2O3 film acting as a barrier layer was introduced between Al and HPYM by natural oxide method to produce Al/Al2O3/HPYM/Ag device. The application of different positive voltages produced different high-conductance currents, resulting in the multilevel memory capability of the device.4. The structure and topography of films in devices have been studied with UV-VIS, LAMAN spectrum, and AFM/SEM/STM method. The conduction model and the failure of the device have been fitted and analyzed, respectively. 5. The M-O-M-O-M structural devices based on TPR, BN4 and NNCN have been fabricated. The reversible bistabiiity of the devices have been studied. The ON/OFF current ratio is 103～105.

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