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Based the AZO seed of ZnO nanowire growth and characteristics of ultraviolet
Author: CaoDong
Tutor: JiangXiangDong
School: University of Electronic Science and Technology
Course: Optical Engineering
Keywords: UV Photoconductivity Characteristics AZO thin films ZnO nanowires Aqueous chemical method
CLC: TB383.1
Type: Master's thesis
Year: 2011
Downloads: 48
Quote: 0
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Abstract
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ZnO as the representative of the wide band gap semiconductor material, has a very excellent optical and electrical properties, has always been a hot area of ??research material. Especially in recent years, a preliminary study of the nano-structured ZnO materials found their performance a lot better than the bulk film material performance, and therefore more focus on right now. With the development of technology and the improvement of people's living standards, the UV detection and application in various fields more and more worldwide attention, while ZnO as a wide band gap semiconductor material in the areas showed tremendous research potential. In this paper, on the basis of previous studies: AZO transparent conductive film on the seed, growth of ZnO nano-arrays, after conductance characteristics of nano-array UV. The specific content of the following three parts: First, the use of radio-frequency magnetron sputtering AZO films prepared on high purity quartz substrate as the seed layer. In order to obtain a good surface morphology, crystallinity, and at the same time having a low resistivity and high transmittance films, and subject to the influence of the process parameters of the sputtering time, sputtering power, substrate temperature, and a working gas pressure of the system. The results found that the impact of various process parameters on membrane performance is very obvious is finalized in the substrate temperature 300o, sputtering time of 2 hours, work Pressure 0.5Pa, and sputtering power of film crystallization 150W conditions, the average visible transmittance more than 90%, the square resistance up to 50? / □ fully meet the experimental requirements, contribute to the epitaxial growth of ZnO nano-arrays. After that, the low-temperature aqueous chemical method in AZO seed layer on the Preparation of ZnO nano-arrays. In order to obtain uniform distribution, high crystallinity, and perpendicular to the substrate growth of ZnO nano array experiment to be adjusted within a certain range, the experimental parameters of the growth liquid concentrations, growth time, and the preparation temperature. The characterization results show that Zn (CH3COO) 2 (CH2) 6N4 mixed solution concentration 0.05mol / L, the growth temperature of 90 ° C water bath growth time of 4 hours under conditions ZnO nano-arrays to achieve the growth of highly oriented perpendicular to the substrate . At this point, the nanowire diameter size appropriate evenly distributed and well crystallized. Their photoelectric performance test, nano arrays IV curve linear feature, but also has good transmittance. Finally, on the basis of the above study, UV conductance characteristics of the material system. The study on the characteristics of nano-array UV process is based the electrode / nanoarray / AZO three vertical test structure. The results show that produce a significant impact on the morphology of the nano-array difference, the difference of the seed crystal, as well as high temperature annealing process will its ultraviolet light conduction properties. Ultimately, the results show that on the AZO seed crystal perpendicular to the substrate growth of nano-array, after the annealing treatment at 400 ℃ exhibits excellent UV-response characteristics. Also found in the preparation process of the AZO film, a thin film obtained by the high oxygen-argon ratio environment exhibit high-impedance characteristics and UV response performance. Annealing treatment of to study different annealing temperatures the UV response characteristic differences. The results show that, after the annealing treatment at 600 ℃ the UV high degree of response and more rapid response.
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