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Study on Electrical Characteristics of High-κ Gate Dielectric LaAlO3

Author: ZhangZuo
Tutor: LiuHongXia
School: Xi'an University of Electronic Science and Technology
Course: Microelectronics and Solid State Electronics
Keywords: A high-κ material Tunneling current Thermal stability Edge of the parasitic capacitance Threshold voltage drift
CLC: TN386
Type: Master's thesis
Year: 2011
Downloads: 31
Quote: 0
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Abstract


Bound by the principle of a scaled-down , in order to maintain the excellent performance of the MOS device , while inhibition of large direct tunneling current and to maintain the reliability of the gate oxide layer , then you need to look for a new type of high - κ materials instead of the traditional SiO2 gate dielectric . Combining many factors industry Hf group La group metal oxide is considered as the next generation of the gate dielectric excellent option . This thesis, a new type of high - κ materials LaAlO 3 < / sub> electrical properties , it is an excellent high - κ gate dielectric material . From theory and computer-aided simulation of the electrical characteristics of the two aspects of LaAlO 3 film . Studied the influence of the interface state for the thin film electrical characteristics , as well as a higher annealing temperature , the thermal stability of the gate oxide layer for the performance of the devices . In addition, the combination of direct tunneling , FN tunneling hot electron emission the carrier tunneling mechanisms , fitting actually exist in tunnel the LaAlO 3 films wear the current mechanism . ISE-TCAD platform for different temperatures LaAlO 3 film leakage current simulation . In addition, for the use of threshold voltage drift problem prevalent in high - κ gate dielectric , this article give a detailed discussion and calculations . Application of the high-κ gate dielectric has increased the physical thickness of the oxide layer , thereby generating the edge of the field effect with the increase of the value of κ becomes remarkable . The edge parasitic capacitance modeling and calculation, the description of it for the enhancing effect of the short channel effect , and for the impact of the threshold voltage . In addition , La and Al-element electric dipole layer is formed on the Si substrate , and a high-κ dielectric interface to adjust the method of the flat band voltage of the MOS devices has been widely used by the industry , use of this layer of the polarity of the electric dipole , and adding Al and La elements respectively for positive and negative regulation of the flat band voltage . Containing both La elements and containing Al elements LaAlO 3 film , this article detailed study of the mechanism of the electric dipole , calculated with La: Al ratio and annealing temperature , the flat band changes in the voltage drift , summed up the process of annealing temperature .

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CLC: > Industrial Technology > Radio electronics, telecommunications technology > Semiconductor technology > Field-effect devices
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