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Design of Trench CoolMOS Termination Structure

Author: ZhouLe
Tutor: HuangQiZuo；GongDaWei
School: Shanghai Jiaotong University
Course: IC Engineering
Keywords: Power device Trench CoolMOS breakdown voltage Composite Buffer Layer termination
CLC: TN386.1
Type: Master's thesis
Year: 2011
Downloads: 62
Quote: 0
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Abstract


With the development of PIC (Power Integrate Circuit), we request more for the performance of Power Devices. Higher breakdown voltage, lower specific ON resistance, higher frequency, lower self heating and better device isolation are needed. Trench CoolMOS is the power device with lower specific on resistance and great current management. Furthermore, Trench CoolMOS simplify the process flow of the CoolMOS, and reduce the manufacture cost.This paper focuses on two aspects:1). The process flow of Trench CoolMOS Using trench process instead of epitaxy (EPI) process to generate the Composite Buffer Layer will obviously simplify the process flow and reduce the manufacture cost.2). Different termination structures will affect the breakdown voltage The termination of the Trench CoolMOS will affect the breakdown voltage. At the side of device designing: change the trench window or space, and get different breakdown voltage. At the side of process: change the trench depth, or change the material filling in the trench, and also get different breakdown voltage. Study on the relation between these ways and breakdown voltage. And hope to get 560V breakdown voltage or more.

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CLC: > Industrial Technology > Radio electronics, telecommunications technology > Semiconductor technology > Field-effect devices > Metal - oxide - semiconductor (MOS) devices
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