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VLSI rapid thermal annealing process optimization study

Author: ZhangWei
Tutor: ZhengGuoXiangï¼›GongDaWei
School: Fudan University
Course: Materials Engineering
Keywords: Rapid thermal processing LPNP Temperature monitoring Temperature uniformity Oxidation damage recover Yield
CLC: TN47
Type: Master's thesis
Year: 2008
Downloads: 85
Quote: 1
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Abstract


It is generally acknowledged that the wafer size becomes bigger and the increasing device count has been accompanied by a shrinking minimum feature size. Temperature change may cause wafer uniformity goes worse, lead to low approved rate. In this paper we discuss the resolution about temperature uniformity of rapid thermal anneal.We have discussed based on the theory of rapid thermal anneal, using the example of semiconductor process in ASMC, we do rapid thermal anneal in N2 ambience at different temperature, different dose, different energy, different doping. We try to find out the most sensitive process condition and use it for offline control for RTP.In our production, the short circuit may happen in LPNP. We analyze the SEM photos, and do experiments, find out the cause of short circuit in LPNP. The rapid thermal anneal process can cure the damage and increase the line yield.The research subject has taken advantage of these rapid process techniques, and has been able to successfully meet the semiconductor manufactory. It is also found that it is significance of the RTP model established.

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