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Nitrogen ion implantation properties of single crystal silicon
Author: ZhaoErMin
Tutor: LiYangXian
School: Hebei University of Technology
Course: Materials Physics and Chemistry
Keywords: Silicon Ion Implantation Nitrogen-oxygen complexes Oxygen precipitation Resistivity
CLC: TN304.12
Type: Master's thesis
Year: 2008
Downloads: 81
Quote: 1
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Abstract
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CLC: > Industrial Technology > Radio electronics, telecommunications technology > Semiconductor technology > General issues > Material > Elemental semiconductors > Silicon
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