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Hydrogenated amorphous silicon thin film DC and RF Magnetron Sputtering and Characterization

Author: PanZhen
Tutor: ZhaoQingNan；ZhaoXiuJian
School: Wuhan University of Technology
Course: Building materials and engineering
Keywords: DC and RF magnetron sputtering Hydrogenated amorphous silicon thin film Partial pressure of hydrogen Substrate temperature Optical bandgap
CLC: TM914
Type: Master's thesis
Year: 2009
Downloads: 380
Quote: 6
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Abstract


At present, the silicon thin film solar cell research has become an international hotspot photovoltaic field, with respect to the silicon thin film solar cells and polycrystalline silicon solar cells, has the supplies, low cost characteristics, in particular the introduction of inexpensive substrate, the silicon thin film solar cells in cost control have a stronger market competitiveness. Amorphous silicon thin film solar cell production process is simple, the substrate temperature is low, easy application integration processes and large-scale production, the ability to combine materials constitute BIPV systems. It is a silicon thin film solar cells of one of the most promising class of battery, therefore, amorphous silicon thin film material of concern. In this thesis, DC and RF magnetron sputtering on glass substrates hydrogenated amorphous silicon deposited on (a-Si: H) thin films. Using X-ray diffraction (XRD), NKD7000W film analyzer, Fourier transform infrared spectroscopy (FTIR), Raman spectroscopy (Raman), UV - visible light transmittance spectroscopy (UV-VIS) test phase structure of the films , film thickness, and transmittance of silicon-hydrogen bond studied sputtering power, substrate temperature and hydrogen partial pressure on the film structure and properties. The results showed that: 1) With the sputtering power increases, the deposition rate will gradually increase, the growth rate of deposition rate increases as the power increases first and then decreases; sputtering power increases the film thickening, visible is the total transmittance decreased; as the sputtering power increases, the optical band gap of the film decreases. 2) at 300 ℃ or less, the substrate temperature, the base does not affect the deposition rate, the total visible light transmittance and optical band gap. 3) the sputtering pressure of argon gas under certain circumstances, increase the hydrogen partial pressure of the film deposition rate can be reduced; deposition rate decreases, the same time, thin films, in the visible range with a total transmittance increased to some extent; as hydrogen partial pressure increases, the optical band gap gradually increases. 4) hydrogenated amorphous silicon thin film X-ray diffraction and Raman scattering spectroscopy analysis shows that the film is amorphous, but through the UV - visible light transmittance spectrum calculation, the optical band gap of about 1.9 ~ 2.0eV, Therefore, it is considered mainly amorphous film is, during a small nanocrystals studded structure. 5) Comparison of the DC and RF sputtering deposition of silicon thin film sputtering rate and morphology. DC sputter deposition rate was significantly greater than the average, the average RF magnetron sputtering deposition rate; RF sputter deposition uniformity and dense film is superior to the DC sputter deposition of thin films.

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CLC: > Industrial Technology > Electrotechnical > Independent power supply technology (direct power) > Photocell
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