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Zinc oxide (ZnO) is a wurtzite crystal structure having a wide band gap Ⅱ - Ⅵ semiconductor material . Al -doped ZnO called ZAO. ZAO films with excellent optical characteristics , a rich source of raw materials , low cost , non-toxic , chemical and thermal stability and good. Therefore , ZAO thin films optical properties of thin films in recent years become a research focus . In this paper, low DC reactive magnetron sputtering , at 80 ℃ on glass substrates were prepared and its ZAO thin annealing processing, using X-ray diffraction (XRD), scanning electron microscopy (SEM), a spectrophotometer , four-probe tester, and other analytical testing methods , test and analysis of the film explores the cryogenic ZAO thin films by magnetron sputtering technique . The experimental results show that after in-situ deposition and annealing of the sample are obvious c-axis orientation and good optical properties. Film preparation process and the optimum vacuum annealing process parameters: target-substrate distance 6cm, sputtering time 30min, 12% of the oxygen partial pressure , sputtering power 60W; annealing temperature of 500 ℃, annealing time is 1.5 hours . Prepared with the best process parameters ZAO thin , near a wavelength of 380nm at a maximum transmittance of 90 %, the lowest resistivity is 2.52 × 10 -3 Ω · cm; optimum annealing process after ZAO film processing , in the vicinity of 380nm wavelength of maximum transmittance is 92 %, the lowest resistivity is 5.63 × 10 -4 Ω · cm.
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