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Numerical Simulation of Heat, Momentum and Mass Transport in the Melt of Czochralski Silicon Single Crystal

Author: XuZuoZuo
Tutor: LiMingWei
School: Chongqing University
Course: Power Engineering and Engineering Thermophysics
Keywords: Czochralski Monocrystalline Partitions Numerical Simulation Finite volume method
CLC: TB39
Type: Master's thesis
Year: 2009
Downloads: 229
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Abstract


Monocrystalline silicon is an important raw material for semiconductor devices and integrated circuits, has a very important impact on the development of information technology. Czochralski growth of single crystal silicon is an important method, Czochralski crystal growth process both the transmission of the material, momentum and heat transfer, the crucible melt flow, heat and mass transfer direct impact on the silicon single crystal quality. In order to improve the quality of crystalline silicon, you must understand the characteristics of the growth crucible Czochralski silicon melt flow, heat transfer and mass transfer. The subject in conventional silicon single crystal growth crucible added partitions studies under different boundary conditions crucible silicon melt flow, heat transfer and mass transfer characteristics and laws. Join partitions Czochralski silicon melt within the energy, momentum, mass transport of physical models and mathematical models assumed that the silicon melt incompressible Newtonian fluid, meet Boussinesq assumption, for the steady-state two-dimensional axisymmetric motion finite volume method for numerical solution. Calculated using the low Reynolds number κ-ε turbulence model, the analysis of the different partitions height, the the partitions position crystal speed, the speed of the crucible and the crucible wall thermal boundary conditions and other factors on the silicon melt flow field, temperature field and the oxygen concentration. The results showed that: As the partition wall height becomes short, the flow of the silicon melt becomes weak; melt - near the crystal interface isotherm is more intensive, more flat; melt - the average increase in the oxygen concentration of the crystal interface, the melt - the crystal interface of oxygen concentration radial distribution more uneven. With the increase in the distance between the center axis of the partition wall and the crucible, the melt flow is weakened; melt - near the crystal interface isotherm denser, more flat; lower melt - the average oxygen concentration of the crystal interface, melt - crystal interface oxygen concentration radial distribution more uneven. The overall flow of the silicon melt crystal speed impact is not great, and crystal rotation due to the presence of cell walls weakened further impact on the overall flow field. However, the centrifugal force generated by a crystal rotation will affect the melt - the flow of the melt in the vicinity of the crystal interface, heat transfer and oxygen concentration. With the increase in the rotational speed of the crystal, melt flow enhancement; melt - near the crystal interface isotherm becomes sparse; melt - the average oxygen concentration of the crystal interface increases, more uniform melt - the radial distribution of the oxygen concentration of the crystal interface. Crucible rotation the flow of the silicon melt as a whole has a great influence. With the increase in the rotational speed of the crucible, the overall flow of the silicon melt is weakened; melt - near the crystal interface isotherm denser, more flat; melt - the average oxygen concentration of the crystal interface of the melt - the oxygen concentration of the crystal interface radially more evenly distributed. The crucible sidewall thermal boundary second type of thermal boundary conditions and the operating conditions of the first class thermal boundary conditions, the entire silicon melt flow field, temperature field and the oxygen concentration field has similar characteristics. With the side wall of the crucible and the melt - the maximum temperature difference of the crystal interface, or an increase of heat flux in the crucible sidewall, the entire melt flow enhancement; melt - the average increase in the oxygen concentration of the crystal interface, the interface the oxygen concentration of the melt - Crystals radially the uniformity of distribution of little change.

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