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Research on Preparation and Optical Character of Si-doped ZnO Film

Author: YinDongMei
Tutor: XuChangShan
School: Northeast Normal University
Course: Condensed Matter Physics
Keywords: ZnO thin films Magnetron sputtering Doping Si Annealing
CLC: O484.41
Type: Master's thesis
Year: 2009
Downloads: 141
Quote: 2
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Abstract


ZnO is a wide bandgap II - VII semiconductor material, the width of the band gap is about 3.37 eV, wurtzite structure is hexagonal, good chemical stability, rich source material, low price. The many advantages of ZnO decided this versatile semiconductor material has a very wide range of applications in many fields. In order to meet the various requirements of the devices, particularly the requirements in the photoelectric people trying various elements doped in ZnO in order to achieve a modulation of its photoelectric properties. About ZnO bandgap regulation aspects, there are many literature reports. But the current for by doping achieve reported ZnO band gap is increased, both the conduction band of ZnO regulator to achieve the purpose of increasing the band gap, since the ZnO valence band determined by O 2p state, level deeper, Chris G Van de Walle First-principles calculation results SiO2 than ZnO valence band energy level deeper by Si-doped ZnO valence band to lower energy direction, that vision can be achieved, This is of great significance for achieving the ZnO-based light emitting device having a high injection efficiency. Meanwhile, via Si doped ZnO visible region of light-emitting mechanisms provide useful information. Experiment using a magnetron sputtering method using ZnO ceramic target, a quartz substrate, and prepared with different Si doping concentration of the sample, and the sample in an oxygen atmosphere of the rapid thermal annealing of the different temperatures and naturally with the furnace annealing process For comparison, the experiment using the same preparation method undoped ZnO films. By X-ray diffraction, Raman spectroscopy, photoluminescence spectroscopy and absorption spectra characterized their structural and optical properties. By X-ray diffraction and Raman spectra analysis shows that Si may be incorporated into the ZnO lattice. Through comparison of undoped ZnO films and different Si doping concentration of the ZnO thin film photoluminescence spectra shows that in the ultraviolet region, the doping of Si leads to the UV emission peak moves towards the short direction, and thus can be judged, the Si-doped into ZnO band gap increases. The analysis of the absorption spectra also come to that conclusion. Si incorporation of the ZnO visible area light-emitting also had a major impact. Undoped ZnO thin film after annealing at 700 ° C oxygen atmosphere, the UV luminescence enhancement, visible emitting weakened, while the visible region light emitting center shows a blue shift, and a Si-doped ZnO film in the annealing process was also observed to a visible light emitting the center blue shift phenomenon, but with the doping concentration is increased, the visible region of the luminous center the blue shift annealing temperature also increased, indicating that ZnO doped Si and produce ZnO visible area light deep level defects The strong interaction.

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CLC: > Mathematical sciences and chemical > Physics > Solid State Physics > Thin Film Physics > The nature of the films > Optical Properties
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