Dissertation > Excellent graduate degree dissertation topics show

Design and Performance Study for AlN as the Gate Dielectric Material Applied to Nano-scale MOS Devices

Author: ZhuJiaJun
Tutor: YangHongGuan；JiangAiGuo
School: Hunan University
Course: Electronics and Communication Engineering
Keywords: Nano- MOSFET High-k materials AlN films DC reactive magnetron sputtering Breakdown field
CLC: TN386.1
Type: Master's thesis
Year: 2009
Downloads: 49
Quote: 0
Read: Download Dissertation

Abstract


With the rapid development of microelectronics technology , semiconductor device feature sizes continue to shrink in accordance with Moore's Law , SiO2 as the gate dielectric material in the next few years will be difficult to meet the requirements of this trend , as a background to the next generation of nano- MOSFET high-k gate dielectric materials, microelectronics become a research hotspot . AlN film has a unique set of physical and chemical properties , the electrical, optical , acoustical and mechanical aspects have broad application prospects. In particular having a high thermal conductivity AlN , high resistivity , breakdown field strength , thermal expansion coefficient and GaN, GaAs and other commonly used semiconductor materials to match these properties , it is widely used. In this paper, a new generation of nano- AlN thin insulating gate dielectric MOS devices has carried out some research work . First, an overview of AlN thin films , applications and research situation , the dielectric constant from the material , the band gap , the thermal stability of the Si interface quality, process compatibility , reliability, and other aspects of a comprehensive analysis of AlN nano MOS devices the possibility of the gate dielectric material . Secondly , the calculation and analysis Alternate SiO2 as the gate dielectric AlN nano material change in electrical characteristics of MOS devices found in the given initial conditions, the structure of the device can withstand the gate voltage of 4.3V , the source - drain saturation current of 5.62 × 10-9A, the tunneling current can be reduced to about 10-7A/cm2 . Can be significantly improved due to the size reduction of the dielectric layer of tunneling current increases . Finally, the article by DC reactive magnetron sputtering a high breakdown field strength and analyzed AlN insulating film preparation conditions on the deposition of AlN thin film electrical properties . Studies show that , working pressure , the nitrogen concentration and the substrate temperature and other factors will significantly affect the quality crystalline AlN films and the organizational structure , thereby affecting its electrical properties. Maintaining the stability of other process parameters , the working pressure of 0.5 ~ 1.2Pa, a nitrogen concentration of 70 to 80%, the substrate temperature is 400 ℃, good performance can be deposited on the crystal , preferred orientation and high electrical performance of the AlN films .

Related Dissertations

  1. Preparation and Tribological Properties of Tungsten Disulfide （WS2） Film,O313.5
  2. Vertical-cavity Surface-emitting Semiconductor Laser Insulation Membrane Technology Research,TN365
  3. Research on Shot Noise and Transport Mechanism for Nanoscale MOSFET,TN386
  4. The Study on Nano-BT/PVDF Composite,TB332
  5. Investigation on Dielectric Properties of Montmorillonite Modified Polyethylene Nano-Composites,TB383.1
  6. D-T type horizontal axis Numerical simulation of mixing devices,TQ051.8
  7. Shot Noise Suppression and Its Application in Nanoscale MOSFET,TN386.1
  8. Study on Preparation and Optical Gas Sensing Characteristics of Ti-doping Nano Tungsten Oxide Films,O484.41
  9. Research on Superconducting NbN, NbTi Films Preparation and Related Devices,TN773
  10. Simulation Study of AlN Adsorption on the α-Al2O3（0001） Surface,O647.31
  11. Study on Polyimide/Silica Nano-Hybrid Films,TB383.1
  12. Selective Absorption of the Solar Spectrum TiNx Films,TB383.2
  13. Preparation and Performance Optimization of ZnO Transparent Conductive Films,TN304.2
  14. Study on Charge Trapping Memory with MAHOS Structure,TP333
  15. Effect of Nano Additive Size on Carriers Behaviours in Nanocomposite Polymer Material,TB383.1
  16. Structure and Properties of AlN and Fe-doped AlN Films,TB383.2
  17. The Preparation and Ohmic Contact Characteristics of AZO Thin Film on P-type GaN,O484.42
  18. Investigation of Water-dielectric Spiral Strip Blumlein Line,TN78
  19. Epitaxial Growth of UV Optoelectric Material ZnO and the Study of Its Character,TN23
  20. ZnO Thin Films and ZnO Ultraviolet Detector,O484

CLC: > Industrial Technology > Radio electronics, telecommunications technology > Semiconductor technology > Field-effect devices > Metal - oxide - semiconductor (MOS) devices
© 2012 www.DissertationTopic.Net  Mobile