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Silicon carbonitride (SiCN) film is a new kind of ternary functional thin film materials and wide optical band gap, because of its high hardness, good high temperature oxidation resistance and corrosion resistance can many advantages in microelectronic semiconductor and computer industries, and other It has broad application prospects. In this paper, the the SiCN film structure and chemical composition and its film properties. In this paper, the independent research and development of Dalian University of beam laboratory dual discharge chamber microwave-ECR plasma enhanced unbalanced magnetron sputtering system SiCN films were prepared. As working gas to the high-purity argon gas (99.99%), high purity nitrogen gas (99.99%), as the reaction gas, a high-purity silicon (99.99%) and high purity graphite (99.99%) as the sputtering target, fixed carbon target sputtering bias voltage to change the conditions of the sputtering power and the nitrogen flow rate of the silicon target, SiCN films were prepared on Si (100) substrate. And by Fourier transform infrared spectroscopy (FT-IR), X-ray photoelectron spectroscopy (XPS) analysis of the SiCN thin-film chemical structure and composition along with the changes in the parameters and mechanics of thin films by nanoindentation, elliptical polarized spectrometer optical and other properties of the test. The study showed that the experimental parameters on the the SiCN films chemical structure and mechanical, optical properties have a great influence. Si target sputtering power SiCN films can effectively improve the Si content, reducing impurities O. The lowest Si target sputtering power (100W), a thin film of Si to Si-N bond structure mainly O impurity content of up to 10.63%, mainly Si-O bond structure, the porous structure of the film led to the atmospheric environment The chemical adsorption of O is a major source of impurities in the film O; in the case of high Si target sputtering power (> 250W), the thin film Si excess Si-C and Si-Si bond structure mainly O impurity content is lower at 4%, and the to CO bond structure-based dense film, hardness up 29.1Gpa, refractive index 2.43; However, to improve the Si target sputtering power while increasing N 2 flow, leading to Si target \Si target sputtering power 100W, N 2 the flow 9sccm, the amount of O film contains up to 14.6%, loose texture of a thin film caused by the Si insufficient amount is the main reason for the O impurity content is high, in this case, CN bond content of the film than simply increase the the Si target sputtering power obtained film, accounting for 24% of the film, but the combination of state of the C, N sp 2 = N and sp 1 C = N bond as the main to lead the high N 2 film hardness obtained under flow conditions significantly reduce the maximum only 17.5Gpa; but high N 2 flow was significantly reduced, generally below 2.0, thus reducing the electronic polarization of the portion of the SiCN film dielectric constant.
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