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Research on Sb Laser Material and Device for AlGaAsSb/InGaAsSb on GaAs Substrate

Author: GaoBenLiang
Tutor: LiuGuoJun
School: Changchun University of Science and Technology
Course: Optics
Keywords: Molecular beam epitaxy Antimony compounds Reflection high energy electron diffraction AlSb buffer layer
CLC: TN244
Type: Master's thesis
Year: 2009
Downloads: 101
Quote: 0
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Abstract


Presence of 7% of the average lattice parameter of the GaAs substrate and InGaAsSb lattice mismatch , the paper through a series of experiments studied GaSb, AlSb buffer layer : by optimizing the GaSb, AlSb buffer layer Ⅴ / Ⅲ ratio , growth temperature , and growth thickness and other parameters , and get better quality GaSb / AlSb / GaAs epitaxial materials . The experiment proved growing GaSb epitaxial layer suitable temperature of about 480 ° C ; the AlSb growth process , a larger V / III ratio ( optimized value of 20) , suitable AlSb buffer layer thickness (1.2nm), conducive to improve the epitaxial layer crystal quality. On this basis , the paper design and preparation of AlGaAsSb / InGaAsSb single quantum well laser materials by atomic force microscopy ( AFM ) , Hall effect (Hall effect), photoluminescence spectra (PL) were used to characterize the quality of the materials initially been lasing characteristics of the laser , and explore antimonide epitaxial growth and optimization methods . Laid a foundation for the further preparation of high-quality laser materials and devices .

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CLC: > Industrial Technology > Radio electronics, telecommunications technology > Photonics technology,laser technology > Laser technology, the maser > Laser materials and substances
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