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Preparation and Properties of PI/SiO2-Al2O3 Nanocomposite Films
Author: WangXiaoLin
Tutor: ZhouHong
School: Harbin University of Science and Technology
Course: Materials Science
Keywords: polyimide silica alumina silane coupling agent compatibility
CLC: TB383.1
Type: Master's thesis
Year: 2009
Downloads: 108
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Abstract
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Polyimide (PI) has been widely used in electrical engineering, aerospace and microelectronic industries because of their outstanding dielectricity, mechanical, and thermal properties. In recent years, a number of studies have been conducted on preparation and general performance of PI by different workers at home and abroad. In order to improve properties of PI, methods of doped inorganic oxide into PI have been widely studied. However, the compatibility between PI and inorganic oxide still needs to be improved.In this paper, (3-aminopropyl)trimethoxysilane (APTMOS) was modified by reacting with pyromellitic dianhydride(PMDA). Then, PI/SiO2 and PI/Al2O3-SiO2 composite films were prepared by sol-gel with 4,4’-oxydianiline diamine (ODA) and pyromellitic dianhydride (PMDA) as monomer, N,N-dimethyl acetamide (DMAc) as solvent, SiO2 collosol, Al2O3 collosol and modified APTMOS as dopant. The composite films have been characterized by Fourier transform infrared spectroscopy (FTIR) and scanning electron microscope (SEM). The results showed that the size of inorganic particles in PI composite films was obvious decreasd by adding modified APTMOS. Properties of the composite films were measured by dielectric breakdown strength, corona-resistance time and dielectric spectra. Influence of modified APTMOS on properties of the composite films and the relations between properties and contents of the doped inorganic oxide contents were studied. The results revealed that the dielectric breakdown strength of PI/SiO2 composite films was 326kV/mm with SiO2 content of 20wt%, which was 1.5 time than that of pure PI films. Corona-resistance time of PI/SiO2 composite film with SiO2 content of 20wt% was 26.4h, which was 14 times than that of pure PI films. Dielectric breakdown of PI/Al2O3-SiO2 composite film with Al2O3 content of 10wt% was 242kV/mm. Corona-resistance time of PI/Al2O3-SiO2 composite film with Al2O3 content of 5wt% was 3.9h. Decomposition temperature of PI/Al2O3-SiO2 composite film with Al2O3 content of 20wt% was the maximum.
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