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Theoretical Studies on Raman Scattering in Semiconductor Quantum Dot System

Author: ZhongQingHu
Tutor: LiuCuiHong
School: Guangzhou University
Course: Condensed Matter Physics
Keywords: Quantum dots Raman scattering Differential scattering cross section Phonon modes
CLC: O471.1
Type: Master's thesis
Year: 2008
Downloads: 71
Quote: 0
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Abstract


With the metal-organic chemical vapor deposition, molecular beam epitaxy and other modern technology and process development, a variety of shapes, low-dimensional semiconductor structures such as quantum wells, quantum wires and quantum dots and so can grow out by experiment due to a low-dimensional structures the movement of charge carriers in the restricted space is closed, so that it has a three-dimensional materials with very different physical meaning and very rich optical phenomena and their effects. Low-dimensional structures in the future a variety of semiconductor quantum devices optoelectronic and microelectronic design and manufacturing has a very important value, for which there is an urgent need to understand this type of system, electrons, phonons and other aspects of physical properties. Raman scattering, a measure due to its convenient, no damage of the sample, etc., has become the study of low-dimensional semiconductor structures one of the most effective means. By scattering with frequency shift, line width, intensity and polarization scattering studies such as Raman scattering has become precisely obtain low-dimensional semiconductor structures such as the electron and phonon microscopic information a powerful tool. This paper studied theoretically cylindrical quantum wells and quantum dots in a spherical quantum dot-order Raman scattering, the text of five chapters. The first chapter, Introduction. Brief low-dimensional semiconductor structures general features; introduce Raman scattering theory and research status Chapter II, research cylindrical quantum dot quantum wells electronic Raman scattering. Using the effective mass approximation and second-order perturbation theory of quantum mechanics, the system is derived electronic Raman scattering differential cross section expressions given scattering process selection rules, access to a rich set of Raman scattering spectrum analysis different scattering configurations differential scattering intensity variation of well width. Chapter III of freedom spherical semiconductor quantum dots SO and LO phonon-phonon Raman scattering in the first order. Adopt Fr (o) hlich (Foluolixi) Electronics - phonon interaction using time-dependent perturbation theory of quantum mechanics, the differential scattering cross section is derived expression. Gives the selection rules, revealing the differential scattering cross section and quantum dot size, the number of quantum phonon mode changes, and analyzes the different materials phonon contribution to the differential scattering cross section. Chapter IV studies spherical semiconductor quantum dots finite depth of the IO and LO phonon-phonon Raman scattering in the first order differential scattering intensity and quantum dot radius phonon quantum number change, and analyzes the different sizes of quantum point phonon model point, given the transition selection rules. Chapter V, summarize the main results and full research findings, identify shortcomings and make prospects.

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CLC: > Mathematical sciences and chemical > Physics > Semiconductor physics > Semiconductive Theory > Semiconductor quantum theory
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