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Preparation and properties of germanium nanocrystals embedded in a dielectric film

Author: ZhangJiaZuo
Tutor: GaoZuo
School: Shaanxi Normal University
Course: Astrophysics
Keywords: Ge nanocrystals Magnetron sputtering Annealing Phonon confinement Superlattice
CLC: TB383.1
Type: Master's thesis
Year: 2009
Downloads: 34
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Abstract


This thesis on the silicon substrate by magnetron sputtering and annealing were prepared containing Ge nanocrystals in SiO 2 composite film. Research annealing temperature, Ge content and other factors affect the structure of Ge nanocrystals in the composite film. Mosaic in SiO x GeNy, the multilayer film of Ge nanocrystalline Superlattices preparation method on the Si substrate was prepared by this method improve the GE Nanocrystals density, size and the spatial uniformity of the distribution. Testing means using X-ray diffraction (XRD), Raman (Raman) spectroscopy, transmission electron microscopy (TEM) containing Ge nanocrystals prepared SiO 2 composite structural properties of the film, too The main conclusions are as follows: 1. use phonon confinement model to fit the Raman scattering spectra of the samples, draw the size of the nanocrystals. Simulated curves with the experimental curve peak position deviation by XRD analysis of the internal compressive stress of the composite film, by analysis, the compressive stress is the main reason for the Raman simulated curves with the experimental curves of peak position deviations. The annealing temperature has an important influence on the structure of Ge nanocrystals, found through experiments, the Ge nanocrystals crystal temperature of 750 ° C. Under the same conditions, the higher the annealing temperature, the larger the grain size. However, when the annealing temperature is too high, the size and quantity of the grains are reduced. So to get a composite film of high quality, need to select the optimal annealing temperature, from the experimental samples the optimum annealing temperature of about 900 ° C. 3 under the same conditions, with the rise of the Ge content in the sputtering target, the size and number of the GE Nanocrystals have increased. When the content of Ge is smaller, the film will be Si atoms crystallization phenomenon. Ge content and the optimal annealing temperature has a restrictive relationship with increasing Ge content, the Ge nanocrystalline size attainable extremum increases, the reach extremum desired annealing temperature is increased. 4. Composite film Ge atoms crystallization, Ge (111) preferred orientation, but the higher the annealing temperature, the preferred orientation is more obvious. The first multilayer Ge nanocrystals a superlattice way prepared by alternating deposition (SiO 2 Ge) layer and SiO x of GeN y < / sub> layer of 20 double (SiO 2 Ge) / the SiO x the GeN y superlattice structure. Experimental Ge nanocrystalline exists only in the layer (SiO 2 Ge), and its size is limited by the limit of the thickness of the a (SiO 2 Ge) layer. Relative to the traditional monolayer SiO 2 film prepared Ge nanocrystals, superlattice Ge nanocrystals density, size and spatial distribution have been greatly improved.

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